NDF03N60Z, NDP03N60Z,
NDD03N60Z
N-Channel Power MOSFET
600 V, 3.3
W
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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V
DSS
600 V
R
DS(on)
(TYP) @ 1.2 A
3.3
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current
R
qJC
Continuous Drain Current
R
qJC
T
A
= 100°C
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I
D
= 3.0 A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H.
≤
30%,
T
A
= 25°C) (Figure 17)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
4500
3.0
(Note 1)
1.9
(Note 1)
12
(Note 1)
25
NDF
NDP
600
3.0
1.9
12
78
30
100
3000
2.6
1.65
10
61
NDD
Unit
V
A
A
G (1)
A
W
V
mJ
V
V
4
4
dv/dt
I
S
T
L
T
J
, T
stg
4.5 (Note 2)
3.0
260
−55
to 150
V/ns
A
°C
°C
1
1
1
1 2
S (3)
N−Channel
D (2)
3
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
2
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
SD
= 3.0 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
−
Rev. 3
1
Publication Order Number:
NDF03N60Z/D
NDF03N60Z, NDP03N60Z, NDD03N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDP03N60Z
NDF03N60Z
NDD03N60Z
(Note 3) NDP03N60Z
(Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z−1
Symbol
R
qJC
Value
1.6
5.0
2.0
51
51
40
80
Unit
°C/W
Junction−to−Ambient Steady State
R
qJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 1.2 A
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= 15 V, I
D
= 1.5 A
25°C
150°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
V
DD
= 300 V, I
D
= 3.0 A,
V
GS
= 10 V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
V
DD
= 300 V, I
D
= 3.0 A,
V
GS
= 10 V, R
G
= 5
W
t
r
t
d(off)
t
f
3.0
2.0
312
39
8
12
2.5
6.1
6.0
9
8
16
10
W
ns
nC
3.3
BV
DSS
DBV
DSS
/
DT
J
I
DSS
600
0.6
1
50
±10
3.6
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 5)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
5. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
I
S
= 3.0 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 3.0 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
265
0.9
1.6
V
ns
mC
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2
NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
4.0
3.5
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
5.0
10.0
15.0
5.5 V
5.0 V
20.0
25.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
6.0 V
7.0 V
V
GS
= 10 V
6.5 V
I
D
, DRAIN CURRENT (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
4
5
T
J
= 150°C
T
J
=
−55°C
6
7
8
9
10
T
J
= 25°C
V
DS
= 25 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
I
D
= 1.2 A
T
J
= 25°C
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
0.0
V
GS
= 10 V
T
J
= 25°C
10.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
150
I
D
= 1.2 A
V
GS
= 10 V
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.15
1.10
1.05
1.00
0.95
0.90
−50
I
D
= 1 mA
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BV
DSS
Variation with Temperature
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3
NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
10
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
T
J
= 150°C
1.0
C, CAPACITANCE (pF)
I
DSS
, LEAKAGE (mA)
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
C
iss
T
J
= 125°C
0.10
C
rss
0
5
10
15
C
oss
20
25
30
35
40
45
50
0
50 100 150 200 250 300 350 400 450 500 550 600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
Q
T
V
DS
V
GS
Q
GS
Q
GD
300
250
200
150
V
DS
= 300 V
I
D
= 3 A
T
J
= 25°C
100
50
0
12
1
2
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 300 V
I
D
= 3 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
r
t
f
t
d(on)
10.0
3
4
5
6
7
8
9 10
Q
g
, TOTAL GATE CHARGE (nC)
11
T
J
= 150°C
1.0
125°C
25°C
−55°C
0.1
0.3
10.0
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.8
350
0.9
1.0
1.1
1.2
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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4
NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
1 ms
10 ms
dc
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
100
ms
1 ms
10 ms
dc
10
ms
10
100
ms
10
ms
1
1
0.1
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
0.1
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD03N60Z
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF03N60Z
10
1
R(t) (C/W)
50% (DUTY CYCLE)
20%
10%
5.0%
0.1
2.0%
1.0%
SINGLE PULSE
R
qJA
= 2°C/W
Steady State
1E−04
1E−03
1E−02
1E−01
PULSE TIME (s)
1E+00
1E+01
1E+02
1E+03
0.01
1E−06
1E−05
Figure 14. Thermal Impedance (Junction−to−Case) for NDD03N60Z
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
1
5.0%
2.0%
1.0%
0.1
R
qJA
= 40°C/W
Steady State
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
0.01
1E−06
SINGLE PULSE
1E−05
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD03N60Z
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