EEWORLDEEWORLDEEWORLD

Part Number

Search

NDP03N60ZG

Description
2.6 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size156KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

NDP03N60ZG Overview

2.6 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET

NDP03N60ZG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging codeCASE 221A-09
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)100 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
NDF03N60Z, NDP03N60Z,
NDD03N60Z
N-Channel Power MOSFET
600 V, 3.3
W
Features
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V
DSS
600 V
R
DS(on)
(TYP) @ 1.2 A
3.3
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current
R
qJC
Continuous Drain Current
R
qJC
T
A
= 100°C
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I
D
= 3.0 A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H.
30%,
T
A
= 25°C) (Figure 17)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
4500
3.0
(Note 1)
1.9
(Note 1)
12
(Note 1)
25
NDF
NDP
600
3.0
1.9
12
78
30
100
3000
2.6
1.65
10
61
NDD
Unit
V
A
A
G (1)
A
W
V
mJ
V
V
4
4
dv/dt
I
S
T
L
T
J
, T
stg
4.5 (Note 2)
3.0
260
−55
to 150
V/ns
A
°C
°C
1
1
1
1 2
S (3)
N−Channel
D (2)
3
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
2
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
SD
= 3.0 A, di/dt
100 A/ms, V
DD
BV
DSS
, T
J
= +150°C
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
Rev. 3
1
Publication Order Number:
NDF03N60Z/D

NDP03N60ZG Related Products

NDP03N60ZG NDP03N60Z
Description 2.6 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET 2.6 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-hole
Terminal location SINGLE single
Transistor component materials SILICON silicon

Recommended Resources

About HOHO's experience in applying for a development board
HOHO applied for the following development board There are pictures to share with you: (taken by mobile phone, may not be clear)Email address to which the application form should be sent market@prochi...
daicheng Embedded System
Beginners ask questions about arm linux kernel driver development
I would like to ask you, if I want to learn arm linux kernel driver development, do I need to have a good understanding of the chip structure, such as registers and so on....
三一 Linux and Android
Want to build a smart home, how to start? Receive this collection of information
Smart home is a field that has been attracting much attention in recent years. With the continuous development of technologies such as 5G industry, cloud computing, AIoT, and big data, the market dema...
arui1999 Download Centre
Audio amplifier circuit noise problem???
The audio amplifier circuit I made has a lot of noise, a rustling sound, and it burned two transistors, so I connected a larger resistor in series to reduce the voltage division, but the noise is supe...
fredli Analog electronics
Nonlinear Electronic Circuits Test Paper
Nonlinear Electronic Circuits Test Paper 2003-2006...
feifei Industrial Control Electronics
Problems with the 5V3-pin DCDC voltage reference chip
I used a 3.3V 3-pin DCDC reference source chip REF2933 before. Now I find that it is not suitable and I need a 5V one. Has anyone used a 5V 3-pin DCDC voltage reference chip? Can you recommend one? Th...
chenbingjy Analog electronics

Popular Articles

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1377  1389  118  1055  889  28  3  22  18  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号