HER306G datasheet, PDF - EEWORLD Datasheet

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HER306G: Description3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size145KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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HER306G Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

HER306G Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.075 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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HER301G THRU HER308G

ULTRAFAST EFFICIENT

GLASS PASSIVATED RECTIFIER

VOLTAGE：500 TO 1000V

：

CURRENT： 3.0A

：

FEATURE

Low power loss

High surge capability

Ultra-fast recovery time for high efficiency

High temperature soldering guaranteed

250℃/10sec/0.375″lead length at 5 lbs tension

DO-201AD

MECHANICAL DATA

Terminal:Plated axial leads solderable per

MIL-STD 202E, method 208C

Case:Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity:color band denotes cathode

Mounting position:any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

Symbol

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =50°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at Forward current

3A Peak

Maximum DC Reverse Current

Ta =25°C

at rated DC blocking voltage

Ta =125°C

Maximum Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

Vrrm

Vrms

Vdc

If(av)

Ifsm

Trr

Rth(ja)

Tstg,Tj

20.0

-50 to +150

1.0

HER

301G

HER

302G

100

HER

303G

200

140

200

HER

304G

300

210

300

3.0

125

1.3

10.0

200.0

1.7

HER

305G

400

280

400

HER

306G

600

420

600

HER

307G

800

560

800

HER

308G

1000

700

1000

units

µA

°C/W

°C

Storage and Operating Junction Temperature

Note:

1. Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A1

www.gulfsemi.com.cn

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