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YTF640

Description
TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

YTF640 Overview

TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

YTF640 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.18 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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