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Datasheet> All Categories > storage> storage> VG26VS18165DT-5
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VG26VS18165DT-5

Description
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
Categorystorage    storage   
File Size327KB，26 Pages
ManufacturerVanguard International Semiconductor Corporation
Websitehttp://www.vis.com.tw/
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VG26VS18165DT-5 Overview

EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44

VG26VS18165DT-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVanguard International Semiconductor Corporation
Parts packaging codeTSOP2
package instruction0.400 INCH, TSOP2-50/44
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length20.95 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals44
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44/50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.0005 A
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm

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Download Datasheet
VIS
Description
VG26(V)(S)18165C/VG26(V)(S)18165D
1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is
fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. Self-
refresh is supported and CBR cycles are being performed. lt is packaged in JEDEC standard 42-pin 400mil SOJ and
50(44)-pin 400mil TSOPII.
Features
• Single 5V(
±
10 %) or 3.3V(
±
10 %) only power supply
• High speed t
RAC
access time: 50/60ns
• Extended-data-out (EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh
• Refresh interval:
- RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms
- Self-refresh: 1024 cycles
• JEDEC standard pinout: 44-pin 400mil SOJ and 50(44)-pin 400mil TSOPII
Document:1G5-0179
Rev.1
Page 1

VG26VS18165DT-5 Related Products

VG26VS18165DT-5 VG26VS18165DJ-5 VG26VS18165DJ-6 VG26V18165DJ-5 VG26V18165DJ-6 VG26V18165DT-5 VG26V18165DT-6 VG26VS18165DT-6
Description EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TSOP2 SOJ SOJ SOJ SOJ TSOP2 TSOP2 TSOP2
package instruction 0.400 INCH, TSOP2-50/44 SOJ, SOJ42,.44 SOJ, SOJ42,.44 SOJ, SOJ42,.44 SOJ, SOJ42,.44 TSOP2, TSOP44/50,.46,32 TSOP2, TSOP44/50,.46,32 TSOP2, TSOP44/50,.46,32
Contacts 50 42 42 42 42 50 50 50
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 50 ns 50 ns 60 ns 50 ns 60 ns 50 ns 60 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G44 R-PDSO-J42 R-PDSO-J42 R-PDSO-J42 R-PDSO-J42 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
length 20.95 mm 27.31 mm 27.31 mm 27.31 mm 27.31 mm 20.95 mm 20.95 mm 20.95 mm
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bi
Memory IC Type EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
memory width 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 44 42 42 42 42 44 44 44
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 SOJ SOJ SOJ SOJ TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSOP44/50,.46,32 SOJ42,.44 SOJ42,.44 SOJ42,.44 SOJ42,.44 TSOP44/50,.46,32 TSOP44/50,.46,32 TSOP44/50,.46,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 1024 1024 1024 1024 1024 1024 1024 1024
Maximum seat height 1.2 mm 3.76 mm 3.76 mm 3.76 mm 3.76 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES NO NO NO NO YES
Maximum standby current 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A
Maximum slew rate 0.16 mA 0.16 mA 0.145 mA 0.16 mA 0.145 mA 0.16 mA 0.145 mA 0.145 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING J BEND J BEND J BEND J BEND GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
Maker Vanguard International Semiconductor Corporation - Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation Vanguard International Semiconductor Corporation

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