HDPE15U120G
Feb 2016
HDPE15U120G
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDPE15U120G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
V
RRM
= 1200 V
I
F
= 15 A
t
rr(Typ)
= 35 nS
TO-220-2L
Features
C
Ultrafast Recovery Time
Soft Recovery Characteristics
Low Forward Voltage
Low Stored Charge
A
Applications
Cathode
Anode
Freewheeling, Snubber, Clamp
Switch Power Supplies
Motor Control, Inverters, Converters
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current
Non-Rectifier Peak Surge Current @8.3ms
Operating and Storage Temperature Range
Value
1200
15
160
-55 to +175
Unit
V
A
A
℃
Electrical Characteristics
Symbol
V
BR
V
F
I
R
t
rr
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100uA
I
F
= 15A, T
C
= 25℃
I
F
= 15A, T
C
= 125℃
V
R
= 1200V, T
C
= 25℃
V
R
= 1200V, T
C
= 125℃
I
F
= 1A, di/dt = 200A/μs
Min
1200
--
--
--
--
--
Typ
--
2.20
1.85
--
--
35
Max
--
3.0
2.7
10
100
--
Unit
V
V
Reverse Current
Reverse Recovery Time
uA
ns
Thermal Resistance Characteristics
Symbol
R
θJC
Junction-to-Case
Parameter
Typ.
--
Max.
1.5
Unit
℃/W
◎
SEMIHOW REV.A0,.Feb 2016
HDPE15U120G
Typical Characteristics
AVERAGE FORWARD RECTIFIED CURRENT [A]
20
INSTANTANEOUS FORWARD CURRENT [A]
10
15
10
T
C
=125
o
C
1
T
C
=75
o
C
5
T
C
=25
o
C
0.1
0.0
0
25
50
75
100
125
o
150
175
0.5
1.0
1.5
2.0
2.5
3.0
CASE TEMPERATURE [ C]
FORWARD VOLTAGE [V]
Figure 1. Forward Current Derating Curve
Figure 2. Typical Forward Characterisitics
INSTANTANEOUS REVERSE CURRENT [uA]
100
150
f=1MHz
10
JUNCTION CAPACITANCE [pF]
1000
1200
T
C
=125
o
C
120
1
90
T
C
=75 C
0.1
o
60
0.01
T
C
=25
o
C
30
1E-3
0
200
400
600
800
0
1
10
100
REVERSE VOLTAGE [V]
REVERSE VOLTAGE [V]
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Junction Capacitance
◎
SEMIHOW REV.A0,.Feb 2016
Embedded System
京公网安备 11010802033920号
EEWORLD
