Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | Vishay |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 0.05 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum operating temperature | 125 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| surface mount | NO |
| 5961-01-105-3650 | SD215DE | SD213DE | 5961-01-412-9971 | SST213 | |
|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| Maker | Vishay | Vishay | Vishay | Vishay | Vishay |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow |
| Configuration | Single | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W | 0.36 W |
| surface mount | NO | NO | NO | NO | YES |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | - | DEPLETION MODE |