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RJE0603JPE-00-J3

Description
Silicon P Channel MOS FET Series Power Switching
File Size78KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJE0603JPE-00-J3 Overview

Silicon P Channel MOS FET Series Power Switching

Preliminary
Datasheet
RJE0603JPE
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
REJ03G1907-0100
Rev.1.00
Apr 01, 2010
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
4
G
1
2
3
Temperature
Sensing
Circuit
Gate Resistor
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Latch
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D
Body-drain diode reverse drain current
I
DR
Avalanche current
I
AP Note 1
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–50
Note3
–50
–15
964
100
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
Page 1 of 6

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