HYMD532M646CP6-J datasheet, PDF

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HYMD532M646CP6-J: Description200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP); Categorystorage storage; File Size205KB，20 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HYMD532M646CP6-J Overview

200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)

HYMD532M646CP6-J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM,
Contacts	200
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N200
JESD-609 code	e6
memory density	2147483648 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	20

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200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)

This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR

SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is

suitable for easy interchange and addition.

FEATURES

•

JEDEC Standard 200-pin small outline, dual in-line

memory module (SO-DIMM)

Two ranks 64M x 64 organization

2.6V

0.1V VDD and VDDQ Power supply for

DDR400, 2.5V

0.2V for DDR333 and below

All inputs and outputs are compatible with SSTL_2

interface

Fully differential clock operations (CK & /CK) with

133/166/200MHz

DLL aligns DQ and DQS transition with CK transition

Programmable CAS Latency: DDR266(2, 2.5 clock),

DDR333(2.5 clock), DDR400(3 clock)

•

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

Edge-aligned DQS with data outs and Center-aligned

DQS with data inputs

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

Serial Presence Detect (SPD) with EEPROM

Built with 512Mb DDR SDRAMs in 400 mil TSOP II

packages

All lead-free products (RoHS compliant)

ADDRESS TABLE

Organization

256MB

512MB

32M x 64

64M x 64

Ranks

SDRAMs

32Mb x 16

# of

DRAMs

# of row/bank/column Address

13(A0~A12)/2(BA0,BA1)/10(A0~A9)

Refresh

Method

8K / 64ms

PERFORMANCE

Part-Number Suffix

Speed Bin

CL - tRCD- tRP

CL=3

Max Clock

Frequency

CL=2.5

CL=2

-D43

DDR400B

3-3-3

200

166

133

-J

DDR333

2.5-3-3

166

133

-H

DDR266B

2.5-3-3

133

Unit

MHz

Note:

1. 2.6V

0.1V VDD and VDDQ Power supply for DDR400 and 2.5V

0.2V for DDR333 and below

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.3 / Feb. 2006

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Description	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)	200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)
Is it Rohs certified?	conform to	-	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SK Hynix	-	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	-	MODULE	-	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM,	-	DIMM,	-	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	200	-	200	-	200	200	200	200	200	200
Reach Compliance Code	unknow	-	compli	-	compli	compli	compli	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	-	SINGLE BANK PAGE BURST	-	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.7 ns	-	0.7 ns	-	0.7 ns	0.75 ns	0.7 ns	0.7 ns	0.75 ns	0.7 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
I/O type	COMMON	-	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	-	R-XDMA-N200	-	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	2147483648 bi	-	2147483648 bi	-	4294967296 bi	2147483648 bi	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi
Memory IC Type	DDR DRAM MODULE	-	DDR DRAM MODULE	-	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	-	64	-	64	64	64	64	64	64
Number of functions	1	-	1	-	1	1	1	1	1	1
Number of ports	1	-	1	-	1	1	1	1	1	1
Number of terminals	200	-	200	-	200	200	200	200	200	200
word count	33554432 words	-	33554432 words	-	67108864 words	33554432 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	32000000	-	32000000	-	64000000	32000000	64000000	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX64	-	32MX64	-	64MX64	32MX64	64MX64	64MX64	64MX64	64MX64
Output characteristics	3-STATE	-	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	-	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	-	DIMM	-	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	-	260	-	260	260	260	260	260	260
Certification status	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	-	8192	8192	8192	8192	8192	8192
self refresh	YES	-	YES	-	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	-	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	-	2.3 V	-	2.5 V	2.3 V	2.3 V	2.5 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	-	2.5 V	-	2.6 V	2.5 V	2.5 V	2.6 V	2.5 V	2.5 V
surface mount	NO	-	NO	-	NO	NO	NO	NO	NO	NO
technology	CMOS	-	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	-	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	20	-	20	-	20	20	20	20	20	20

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