CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 1/7
MTN3410J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DS(ON)
100V
50A
25mΩ
Symbol
MTN3410J3
Outline
TO-252
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=30A, R
G
=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle
≤
1%
MTN3410J3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
100
±30
50
35
150
30
45
22.5
60
0.37
-55~+175
V
A
mJ
W
W/°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 2/7
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
*I
D(ON)
Dynamic
*Qg
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Rg
Min.
100
-
1.5
-
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.05
2.5
38
-
-
-
22
-
45
15
25
25
200
100
120
9600
275
197
2
-
-
-
120
380
Max.
-
-
4.0
-
±
100
1
25
25
-
-
-
-
-
-
-
-
-
-
-
-
50
150
1.3
-
-
Unit
V
V/°C
V
S
nA
μA
μA
m
Ω
A
nC
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=30A
V
GS
=
±
30
V
DS
=80V, V
GS
=0V
V
DS
=70V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=30A
V
DS
=10V, V
GS
=10V
I
D
=30A, V
DS
=80V, V
GS
=10V
V
DS
=50V, I
D
=1A, V
GS
=10V,
R
G
=6
Ω
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=15mV, V
DS
=0V, f=1MHz
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
I
F
=I
S
, V
GS
=0V
I
F
=25A, V
GS
=0, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN3410J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
3410
MTN3410J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 3/7
MTN3410J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 4/7
MTN3410J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 5/7
Carrier Tape Dimension
MTN3410J3
CYStek Product Specification
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