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GBJ8D

Description
6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size154KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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GBJ8D Overview

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ/KBJ8A thru GBJ/KBJ8M
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -8.0 Amperes
HIKE FOR NO.
6 SCRES
5.16
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product
The plastic material has UL
flammability classification 94V-O
SPACING
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @
TC=100 C
(without heatsink)
0
SYMBOL
GBJ
KBJ
8A
50
35
50
GBJ
KBJ
8B
100
70
100
GBJ
KBJ
8D
200
140
200
GBJ
KBJ
8G
400
280
400
8.0
2.9
GBJ
KBJ
8J
600
420
600
GBJ
KBJ
8K
800
560
800
GBJ
KBJ
8M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
@ TJ=25
0
C
@ TJ=125
0
C
I
FSM
170
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.0
5.0
500
120
55
1.6
0
V
A
A
2
S
PF
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.

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