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GBP201

Description
2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size184KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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GBP201 Overview

2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBP2005 thru GBP210
SURFACE MOUNT
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -2.0 Amperes
.580 14.75
.561 14.25
FEATURES
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
The plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBP2005
GBP201
100
70
100
GBP202
200
140
200
GBP204
400
280
400
2.0
GBP206
600
420
600
GBP208
800
560
800
GBP210
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Outptu Current @
TA=50 C
0
50
35
50
Peak Forward Surge Current
8.3 ms single half sine-wave
super imposed on rated load
Maximum Forward Voltage Drop
per Bridge Element at 2.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage per Element
Maximum Reverse Current at Rated
DC Blocking Voltage per Element T
A
=100
0
C
Operating Temperature Range
Storage Temperature Range
50.0
A
1.1
V
10.0
A
1.0
mA
0
-55 to +125
-55 to +150
C
C
0

GBP201 Related Products

GBP201 GBP2005 GBP202 GBP204 GBP206 GBP208 GBP210
Description 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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