GBU4A thru GBU4M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -4.0 Amperes
FEATURES
Surge overload rating-150 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
Flammability classification 94V-O
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU4A
GBU4B
100
70
100
GBU4D
200
140
200
GBU4G
400
280
400
4.0
2.4
GBU4J
600
420
600
GBU4K
800
560
800
GBU4M
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @
TC=100 C
(without heatsink)
0
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Method)
Maximum DC Forward Voltage at 2.0A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance per element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=100 C
0
I
FSM
150
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.0
5.0
500
93
45
2.2
0
V
A
AS
2
PF
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 50mm x 50mm X 1.6mm Cu Plate Heatsink.
GBU4A thru GBU4M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
RATING AND CHARACTERISTICS CURVES
GBU4A THRU GBU4M
FIG. 1
-
FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
5.0
WITH HEATSINK
CHENG- YI
ELECTRONIC
FIG. 2
-
MAXIMUM NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
180
160
140
120
100
80
60
40
20
0
1
Single Half Sine-Wave
(JEDEC METHOD)
4.0
3.0
WITHOUT HEATSINK
2.0
1.0
0.0
0
20
40
60
80
100
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
120
140
2
5
10
20
50
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
100
10
FIG. 4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
CAPACITANCE, (pF)
1.0
10
0.1
0
TJ=25C, f= 1MHz
0
TJ=25C
PULSE WIDTH:300
S
1.0
0.1
1.0
4.0
10.0
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE, VOLTS
INSTANTANEOUS FORWARD VOL
TAGE, VOLTS
FIG. 5
-
TYPICAL REVERSE CHARACTERISTICS
A)
INSTANTANEOUS REVERSE CURRENT, (
1000
100
0
TJ=125C
0
TJ=100C
10
TJ=50
0
C
1.0
TJ=25
0
C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
