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KBJ10M

Description
3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size154KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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KBJ10M Overview

3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ/KBJ10A thru GBJ/KBJ10M
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -10.0 Amperes
HIKE FOR NO.
6 SCRES
5.16
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product
The plastic material has UL
flammability classification 94V-O
SPACING
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @
TC=110 C
(without heatsink)
0
SYMBOL
GBJ
KBJ
10A
50
35
50
GBJ
KBJ
10B
100
70
100
GBJ
KBJ
10D
200
140
200
GBJ
KBJ
10G
400
280
400
10.0
3.0
GBJ
KBJ
10J
600
420
600
GBJ
KBJ
10K
800
560
800
GBJ
KBJ
10M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
@ TJ=25
0
C
@ TJ=125
0
C
I
FSM
200
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.05
5.0
500
120
55
1.4
0
V
A
A
2
S
PF
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 150mm x 150mm X 1.6mm Cu Plate Heatsink.

KBJ10M Related Products

KBJ10M KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K GBJ10K
Description 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE silicon bridge rectifiers glass passivated bridge rectifiers
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