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KBPC108

Description
3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size276KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
Download Datasheet View All

KBPC108 Overview

3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

SINGLE-PHASE SILICON BRIDGE
CHENG- YI
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
3.0 Amperes
UL recognized file # E149311
Surge overload rating-50 amperes peak
Low forward voltage drop
Small size:simple installation
Tinned copper leads
Mounting:Thru hold for #6 screw
Plastic material has UL flammability
classification 94V-O
Electrically isolated base-1800Volts
Mounting position: Any
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR305
KBPC1005
BR31
KBPC101
BR32
KBPC102
BR34
KBPC104
BR36
KBPC106
BR38
KBPC108
BR310
KBPC110
UNITS
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward @
TC=50 C*
Output Current
@
Ta=50 C**
0
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
60
100
70
100
200
140
200
400
280
400
3.0
2.0
600
420
600
800
560
800
1000
700
1000
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load
Maximum DC Forward Voltage
drop per element at 1.5A DC
Maximum DC Reverse Current at rated
@ TA=25 C
DC Blocking Voltage Per Element
@ TA=100 C
0
0
I
FSM
50
A
V
F
I
R
I
2
t
R
JC
T
J
T
STG
1.2
10
1
10
10
-55 to +125
-55 to +150
0
V
A
mA
A
2
S
C/W
0
I
2
t Rating for fusing(t<8.3ms)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
C
C
0
31
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