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SR108

Description
1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size104KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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SR108 Overview

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

SR102 thru SR110
MINIATURE SCHOTTKY BARRIER
RECTIFIER
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
20 TO 100 Volts
CURRENT
1.0 Amperes
DO-41
FEATURES
Low switching noise
Low forward voltage drop
High current capability
High switching capability
High reliability
High surge capability
MECHANICAL DATA
Case:Molded plastic
Epoxy:UL 94V-0 rate flame retardant
Lead:MIL-STD-202 method 208 quaranteed
Mounting position:Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, reistive or inductive load.
SR102
SR103
30
21
30
0.50
SR104
40
26
40
SR105
50
35
50
SR106
60
42
60
SR108
80
56
80
SR110
100
80
100
UNITS
V
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage at 1.0A
Maximum Average Forward Rectified Current .375"
Lead Length at
TA =75 C
0
20
14
20
0.70
1.0
0.85
Peak Forward Surge Current, I
FM
(surge) :
8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Full Load Reverse Current, Full Cycle
Average at
T A =75 C
0
30
A
30
0.5
10.0
110
80
-50 to +125
0
mA
Maximum DC Reverse Current
TA =25 C
at Rated DC Blocking Voltage
TA =100 C
0
0
mA
pF
C/W
0
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance
JA (Note 2)
Operating and Storage Temperature Range
C
Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. / 2. Thermal Resistance Junction to Ambient.

SR108 Related Products

SR108 SR102 SR103 SR104 SR105 SR106 SR110
Description 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE, DO-41 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE, DO-41 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-41
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