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TMMBAT41

Description
SMALL SIGNAL SCHOTTKY DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

TMMBAT41 Overview

SMALL SIGNAL SCHOTTKY DIODE

TMMBAT41 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeMELF
package instructionGLASS, MINIMELF-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.75 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)235
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current0.1 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature30
®
TMMBAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge non Repetitive Forward Current
Power Dissipation
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 15s
T
i
= 25
°C
t
p
1s
δ ≤
0.5
t
p
= 10ms
T
i
= 95
°C
MINIMELF
(Glass)
Value
100
100
350
750
100
- 65 to + 150
- 65 to + 125
260
Unit
V
mA
mA
mA
mW
°C
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-l)
Junction-leads
Test Conditions
Value
300
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
I
R
*
T
j
= 25°C
T
j
= 100°C
Test Conditions
I
R
= 100µA
I
F
= 1mA
I
F
= 200mA
V
R
= 50V
Min.
100
0.4
0.45
1
0.1
20
µA
Typ.
Max.
Unit
V
V
DYNAMIC CHARACTERISTICS
Symbol
C
T
j
= 25°C
Test Conditions
V
R
= 1V
f = 1MHz
Min.
Typ.
2
Max.
Unit
pF
* Pulse test: t
p
300µs
δ <
2%.
August 1999 Ed: 1A
1/4
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