16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Parts packaging code | DIP |
| package instruction | DIP, DIP24,.3 |
| Contacts | 24 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum access time | 35 ns |
| Other features | LOW POWER STANDBY MODE |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T24 |
| JESD-609 code | e0 |
| memory density | 16384 bi |
| Memory IC Type | CACHE SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 24 |
| word count | 2048 words |
| character code | 2000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 2KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5 mm |
| Maximum slew rate | 0.135 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
| Base Number Matches | 1 |
| TMM2018AP-35 | TMM2018AP | TMM2018AP-45 | TMM2018AP-25 | |
|---|---|---|---|---|
| Description | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
| Is it lead-free? | Contains lead | - | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible |
| Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor |
| Parts packaging code | DIP | - | DIP | DIP |
| package instruction | DIP, DIP24,.3 | - | DIP, DIP24,.3 | DIP, DIP24,.3 |
| Contacts | 24 | - | 24 | 24 |
| Reach Compliance Code | unknow | - | unknow | unknow |
| ECCN code | EAR99 | - | EAR99 | EAR99 |
| Maximum access time | 35 ns | - | 45 ns | 25 ns |
| Other features | LOW POWER STANDBY MODE | - | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE |
| I/O type | COMMON | - | COMMON | COMMON |
| JESD-30 code | R-PDIP-T24 | - | R-PDIP-T24 | R-PDIP-T24 |
| JESD-609 code | e0 | - | e0 | e0 |
| memory density | 16384 bi | - | 16384 bi | 16384 bi |
| Memory IC Type | CACHE SRAM | - | CACHE SRAM | CACHE SRAM |
| memory width | 8 | - | 8 | 8 |
| Number of functions | 1 | - | 1 | 1 |
| Number of terminals | 24 | - | 24 | 24 |
| word count | 2048 words | - | 2048 words | 2048 words |
| character code | 2000 | - | 2000 | 2000 |
| Operating mode | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | - | 70 °C | 70 °C |
| organize | 2KX8 | - | 2KX8 | 2KX8 |
| Output characteristics | 3-STATE | - | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | DIP | - | DIP | DIP |
| Encapsulate equivalent code | DIP24,.3 | - | DIP24,.3 | DIP24,.3 |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | - | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | - | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 | - | 240 | 240 |
| power supply | 5 V | - | 5 V | 5 V |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified |
| Maximum seat height | 5 mm | - | 5 mm | 5 mm |
| Maximum slew rate | 0.135 mA | - | 0.135 mA | 0.15 mA |
| Maximum supply voltage (Vsup) | 5.5 V | - | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | - | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | - | 5 V | 5 V |
| surface mount | NO | - | NO | NO |
| technology | CMOS | - | CMOS | CMOS |
| Temperature level | COMMERCIAL | - | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | - | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | - | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| width | 7.62 mm | - | 7.62 mm | 7.62 mm |
京公网安备 11010802033920号
EEWORLD
