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TMM2018AP-25

Description
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
Categorystorage    storage   
File Size337KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TMM2018AP-25 Overview

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

TMM2018AP-25 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeDIP
package instructionDIP, DIP24,.3
Contacts24
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time25 ns
Other featuresLOW POWER STANDBY MODE
I/O typeCOMMON
JESD-30 codeR-PDIP-T24
JESD-609 codee0
memory density16384 bi
Memory IC TypeCACHE SRAM
memory width8
Number of functions1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusNot Qualified
Maximum seat height5 mm
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1

TMM2018AP-25 Related Products

TMM2018AP-25 TMM2018AP TMM2018AP-45 TMM2018AP-35
Description 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code DIP - DIP DIP
package instruction DIP, DIP24,.3 - DIP, DIP24,.3 DIP, DIP24,.3
Contacts 24 - 24 24
Reach Compliance Code unknow - unknow unknow
ECCN code EAR99 - EAR99 EAR99
Maximum access time 25 ns - 45 ns 35 ns
Other features LOW POWER STANDBY MODE - LOW POWER STANDBY MODE LOW POWER STANDBY MODE
I/O type COMMON - COMMON COMMON
JESD-30 code R-PDIP-T24 - R-PDIP-T24 R-PDIP-T24
JESD-609 code e0 - e0 e0
memory density 16384 bi - 16384 bi 16384 bi
Memory IC Type CACHE SRAM - CACHE SRAM CACHE SRAM
memory width 8 - 8 8
Number of functions 1 - 1 1
Number of terminals 24 - 24 24
word count 2048 words - 2048 words 2048 words
character code 2000 - 2000 2000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C 70 °C
organize 2KX8 - 2KX8 2KX8
Output characteristics 3-STATE - 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP - DIP DIP
Encapsulate equivalent code DIP24,.3 - DIP24,.3 DIP24,.3
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE IN-LINE
Parallel/Serial PARALLEL - PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 240 - 240 240
power supply 5 V - 5 V 5 V
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 5 mm - 5 mm 5 mm
Maximum slew rate 0.15 mA - 0.135 mA 0.135 mA
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V
surface mount NO - NO NO
technology CMOS - CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm - 2.54 mm 2.54 mm
Terminal location DUAL - DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
width 7.62 mm - 7.62 mm 7.62 mm
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