Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4170N
TYPICAL CHARACTERISTICS
3.5
3.0
I
D
, DRAIN CURRENT (A)
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
1.6 V
1.5 V
V
GS
= 1.4 V
2.5
3.0
7.0
4.5 V
2.0 V
T
J
= 25°C
1.8 V
I
D
, DRAIN CURRENT (A)
6.0
5.0
4.0
3.0
2.0
1.0
0
0.6 0.8
1.0
1.2
1.4
1.6
1.8
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
2.0
2.2
2.4
10 V
2.5 V
V
DS
≥
10 V
1.7 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.12
0.10
0.08
0.06
0.04
0.02
I
D
= 3.2 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.0
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 10 V
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
1.6
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
0.6
−50
10
I
D
= 3.2 A
V
GS
= 10 V
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
1000
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
5.0
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTR4170N
TYPICAL CHARACTERISTICS
700
600
C, CAPACITANCE (pF)
500
400
300
200
100
0
C
rss
0
4.0
8.0
C
oss
12
16
20
24
28 30
C
iss
V
GS
= 0 V
T
J
= 25°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
I
D
= 3.2 A
T
J
= 25°C
4.0
5.0
Q
gs
Q
gd
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 3.2 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
10
t
d(on)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
V
GS
= 0 V
T
J
= 25°C
1.0
1.0
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4170N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
L1
VIEW C
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
_
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10
_
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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