TRIAC
(Through Hole / Isolated)
TMG2DQ60F
Triac
TMG2DQ60F
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Applications
(Tj=150
/ Sensitive Gate)
10.5±0.3
3.2±0.3
4.7±0.2
2.7±0.2
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
Wave Ovens, Hair Dryers, other control applications
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
Features
1
16.0±0.3
φ3.2
±0
.2
3
9.7±0.3
2.6±0.2
0.60±0.15
13.0±0.5
3.0±0.3
1.1±0.2
1.4±0.2
2
1 T1
2 T2
3 Gate
0.6±0.15
I
T(RMS)
=2A
High Surge Current
Lead-Free Package
1
2
3
2.54±0.25
5.08±0.5
Identifying Code T2DQ6F
Unit
mm
Maximum Ratings
Symbol
V
DRM
I
T RMS
I
TSM
I
2
t
P
GM
P
G AV
I
GM
V
GM
V
ISO
Tj
Tstg
Item
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
I
2
t for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage R.M.S.
Operating Junction Temperature
Storage Temperature
Mass
Reference
Tj=25
unless otherwise specified
Tc 129
One cycle, 50Hz/60Hz, Peak value non-repetitive
A.C. 1minute
Ratings
600
2
18/20
1.67
1.5
0.1
1
7
1500
40
150
40
150
2
Unit
V
A
A
A
2
S
W
W
A
V
V
g
Electrical Characteristics
Symbol
I
DRM
V
TM
I
GT1
I
GT1
I
GT3
I
GT3
V
GT1
V
GT1
V
GT3
V
GT3
V
GD
dv
/
dt c
I
H
Rth j-c
Rth j-a
Item
Repetitive Peak Off-State Current
Peak On-State Voltage
1
2
Gate Trigger Current
3
4
1
2
Gate Trigger Voltage
3
4
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Reference
V
D
=V
DRM
, Single phase, half wave, Tj 150
I
T
3A, Inst. measurement
V
D
6V R
L
10
Tj 150
Tj 150
V
D
1
2
V
DRM
Ratings
Min. Typ. Max.
1
1.6
5
5
10
5
1.5
1.5
2.0
1.5
0.1
1
2
7.5
50
Unit
mA
V
mA
V
V
V
/
s
mA
/
W
di
/
dt c
A
/
ms V
D
2
3
V
DRM
Holding Current
Thermal Resistance
Junction to case
Junction to ambient
Trigger mode of the triac
Mode
1
I
(
+
)
Mode
2
I
)
(
−
Mode
3 III
(
+
)
Mode
4 III )
(
−
TMG2DQ60F
1
0
Gate Characteristics
V
GM
(7V)
P
GM
(1.5W)
10
0
On-State Characteristics MAX)
(
T= 5
½2 ℃
T= 5 ℃
½1 0
P
G
(0.1W)
(AV)
25℃ 25℃
1
+
GT1
1
+
GT3
1
−
GT1
1
−
GT3
I
GM
(1A)
On-State Current A)
(
Gate Voltage
(V)
1
1
0
01
.
1
V
GD
0.1V)
(
00
.
1
1
1
0
10
0
10
00
01
.
0
05
.
1
15
.
2
25
.
3
3.
5
4
45
.
Gate Current mA)
(
On-State Voltage
(V)
Power Dissipation
(W)
25
.
2
15
.
1
05
.
0
0
0
θ
π
θ
2π
=180゜
θ
θ
=150゜
θ
=120゜
θ
=90゜
θ
=60゜
θ
=30゜
30
6゜
θ Conduction Angle
:
Allowable Case Temperature
(℃)
3
RMS On-State Current vs
Maximum Power Dissipation
10
5
15
4
10
4
15
3
RMS On-State vs
Allowable Case Temperature
θ
=30゜
θ
=60゜
0
θ
30
6゜
π
θ
2π
θ
=90゜
θ
=120゜
θ
=150゜
θ
=180゜
10
3
θ Conduction Angle
:
05
.
1
15
.
2
15
2
0
05
.
1
15
.
2
RMS On-State Current
(A)
RMS On-State Current
(A)
2
0
Transient Thermal Impedance
(℃/W)
Surge On-State Current Rating
(Non-Repetitive)
Surge On-State Current A)
(
10
0
Transient Thermal Impedance
Rth
(j−a)
1
5
60H
Z
1
0
50H
Z
1
0
Rth
(j−c)
5
0
1
1
0
10
0
1
00
.1
01
.
1
1
0
10
0
10
00
Time
(Cycles)
Time
(Sec.)
I
GT
−Tj
(Typical)
10
00
10
00
V
GT
−Tj
(Typical)
I
GT
(t℃)
×100
(%)
I
GT
2 ℃)
( 5
V
GT
(t℃)
×100
(%)
V
GT
2 ℃)
( 5
10
0
I
+
GT1
!
+
)
(
I
−
GT1
!
−
)
(
I
−
GT3
(#
−
)
10
0
V
+
GT1
(!
+
)
−
V
GT1
(!
−
)
V
+
GT3
(#
+
)
V
−
GT3
(#
−
)
I
+
GT3
#
+
)
(
1
0
−0
5
−5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
1
0
−0
5
−5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
Junction Temp. Tj
(℃)
Junction Temp. Tj
(℃)