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AT25DF041A_09

Description
4M X 1 FLASH 2.7V PROM, DSO8
Categorystorage   
File Size704KB,41 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT25DF041A_09 Overview

4M X 1 FLASH 2.7V PROM, DSO8

AT25DF041A_09 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.3 V
Rated supply voltage3 V
maximum clock frequency50 MHz
Processing package description6 X 5 MM, 0.60 MM HEIGHT, GREEN, PLASTIC, MO-229, UDFN-8
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, VERY THIN PROFILE
surface mountYes
Terminal formNO LEAD
Terminal spacing1.27 mm
terminal coatingNICKEL PALLADIUM GOLD
Terminal locationDUAL
Packaging MaterialsUNSPECIFIED
Temperature levelINDUSTRIAL
memory width1
organize4M X 1
storage density4.19E6 deg
operating modeSYNCHRONOUS
Number of digits4.19E6 words
Number of digits4M
Memory IC typeFLASH 2.7V PROM
serial parallelSERIAL
Features
Single 2.3V - 3.6V or 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
70 MHz Maximum Clock Frequency
Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– One 16-Kbyte Top Sector
– Two 8-Kbyte Sectors
– One 32-Kbyte Sector
– Seven 64-Kbyte Sectors
Hardware Controlled Locking of Protected Sectors via WP pin
Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
Fast Program and Erase Times
– 1.2 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 15 µA Deep Power-down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil and 208-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
4-megabit
2.3-volt or
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF041A
1. Description
The AT25DF041A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer-based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF041A, with its erase granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
3668D–DFLASH–9/08

AT25DF041A_09 Related Products

AT25DF041A_09 AT25DF041A-MHF-T AT25DF041A-MHF-Y AT25DF041A-SSHF-B AT25DF041A-SSHF-T
Description 4M X 1 FLASH 2.7V PROM, DSO8 4M X 1 FLASH 2.7V PROM, DSO8 4M X 1 FLASH 2.7V PROM, DSO8 4M X 1 FLASH 2.7V PROM, PDSO8 4M X 1 FLASH 2.7V PROM, PDSO8
Number of functions 1 1 1 1 1
Number of terminals 8 8 8 8 8
Maximum operating temperature 85 Cel 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 Cel -40 °C -40 °C -40 °C -40 °C
surface mount Yes YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
memory width 1 1 1 1 1
organize 4M X 1 4MX1 4MX1 4MX1 4MX1
Is it Rohs certified? - conform to conform to conform to conform to
Maker - Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip)
Parts packaging code - SON SON SOIC SOIC
package instruction - VSON, SOLCC8,.25 VSON, SOLCC8,.25 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8
Contacts - 8 8 8 8
Reach Compliance Code - unknow unknow unknow compli
ECCN code - EAR99 EAR99 EAR99 EAR99
Maximum clock frequency (fCLK) - 50 MHz 50 MHz 50 MHz 50 MHz
Data retention time - minimum - 20 20 20 20
Durability - 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 code - R-XDSO-N8 R-XDSO-N8 R-PDSO-G8 R-PDSO-G8
JESD-609 code - e4 e4 e4 e4
length - 6 mm 6 mm 4.925 mm 4.925 mm
memory density - 4194304 bi 4194304 bi 4194304 bi 4194304 bi
Memory IC Type - FLASH FLASH FLASH FLASH
word count - 4194304 words 4194304 words 4194304 words 4194304 words
character code - 4000000 4000000 4000000 4000000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Package body material - UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - VSON VSON SOP SOP
Encapsulate equivalent code - SOLCC8,.25 SOLCC8,.25 SOP8,.3 SOP8,.3
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial - SERIAL SERIAL SERIAL SERIAL
power supply - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
Programming voltage - 2.7 V 2.7 V 2.7 V 2.7 V
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height - 0.6 mm 0.6 mm 1.75 mm 1.75 mm
Serial bus type - SPI SPI SPI SPI
Maximum standby current - 0.000015 A 0.000015 A 0.000015 A 0.000015 A
Maximum slew rate - 0.014 mA 0.014 mA 0.014 mA 0.014 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) - 3 V 3 V 3 V 3 V
technology - CMOS CMOS CMOS CMOS
Terminal surface - Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal pitch - 1.27 mm 1.27 mm 1.27 mm 1.27 mm
type - NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width - 5 mm 5 mm 3.9 mm 3.9 mm
write protect - HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE
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