AT60142FT-DD15M-E datasheet, PDF

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AT60142FT-DD15M-E: DescriptionRad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM; Categorystorage storage; File Size335KB，13 Pages; ManufacturerAtmel (Microchip)

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AT60142FT-DD15M-E Overview

Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM

AT60142FT-DD15M-E Parametric

Parameter Name	Attribute value
Maker	Atmel (Microchip)
Parts packaging code	DIE
package instruction	DIE,
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	15 ns
JESD-30 code	X-XUUC-N
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	UNSPECIFIED
encapsulated code	DIE
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal location	UPPER

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Features

•

Operating Voltage: 3.3V, 5V tolerant

•

Access Time:

•

– 17 ns

– 15 ns

Very Low Power Consumption

– Active: 610 mW (Max) @ 17 ns

(1)

, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

Wide Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Designed on 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

500 Mils Wide FP36 Package

ESD Better than 2000V

Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

1. 650 mW (Max) @ 15 ns

Note:

Description

The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

The AT60142FT is processed according to the methods of the latest revision of the

MIL PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rad Hard

512K x 8

5V Tolerant

Very Low Power

CMOS SRAM

AT60142FT

Rev. 7726B–AERO–04/09

AT60142FT-DD15M-E Related Products

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Description	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
Maker	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	-	-	Atmel (Microchip)
Parts packaging code	DIE	DFP	DFP	DFP	DFP	-	DIE	DFP
package instruction	DIE,	DFP,	DFP,	DFP,	DFP,	-	DIE,	DFP,
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	-	unknow	unknow
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C
Maximum access time	15 ns	15 ns	15 ns	15 ns	15 ns	-	17 ns	17 ns
JESD-30 code	X-XUUC-N	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	-	X-XUUC-N	R-XDFP-F36
memory density	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi	-	4194304 bi	4194304 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	-	8	8
Number of functions	1	1	1	1	1	-	1	1
word count	524288 words	524288 words	524288 words	524288 words	524288 words	-	524288 words	524288 words
character code	512000	512000	512000	512000	512000	-	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	-	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	-	512KX8	512KX8
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIE	DFP	DFP	DFP	DFP	-	DIE	DFP
Package shape	UNSPECIFIED	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	UNSPECIFIED	RECTANGULAR
Package form	UNCASED CHIP	FLATPACK	FLATPACK	FLATPACK	FLATPACK	-	UNCASED CHIP	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	-	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	-	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-	MILITARY	MILITARY
Terminal form	NO LEAD	FLAT	FLAT	FLAT	FLAT	-	NO LEAD	FLAT
Terminal location	UPPER	DUAL	DUAL	DUAL	DUAL	-	UPPER	DUAL
Contacts	-	36	36	36	36	-	-	36
Number of terminals	-	36	36	36	36	-	-	36
Maximum seat height	-	3.05 mm	3.05 mm	3.05 mm	3.05 mm	-	-	3.05 mm
Terminal pitch	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-	-	1.27 mm
width	-	12.195 mm	12.195 mm	12.195 mm	12.195 mm	-	-	12.195 mm

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