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AT60142FT-DS15MMQ

Description
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
Categorystorage    storage   
File Size335KB,13 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT60142FT-DS15MMQ Overview

Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM

AT60142FT-DS15MMQ Parametric

Parameter NameAttribute value
MakerAtmel (Microchip)
Parts packaging codeDFP
package instructionDFP,
Contacts36
Reach Compliance Codeunknow
ECCN code3A001.A.2.C
Maximum access time15 ns
JESD-30 codeR-XDFP-F36
memory density4194304 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.05 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width12.195 mm
Features
Operating Voltage: 3.3V, 5V tolerant
Access Time:
– 17 ns
– 15 ns
Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns
(1)
, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 2000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
1. 650 mW (Max) @ 15 ns
Note:
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
Rev. 7726B–AERO–04/09
1

AT60142FT-DS15MMQ Related Products

AT60142FT-DS15MMQ AT60142FT-DD15M-E AT60142FT-DS15ESCC AT60142FT-DS15M-E AT60142FT-DS15MSR AT60142FT_09 AT60142FT-DD17MSV AT60142FT-DS17M-E
Description Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
Maker Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) - - - Atmel (Microchip)
Parts packaging code DFP DIE DFP DFP DFP - DIE DFP
package instruction DFP, DIE, DFP, DFP, DFP, - DIE, DFP,
Contacts 36 - 36 36 36 - - 36
Reach Compliance Code unknow unknow unknow unknow unknow - unknow unknow
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C - 3A001.A.2.C 3A001.A.2.C
Maximum access time 15 ns 15 ns 15 ns 15 ns 15 ns - 17 ns 17 ns
JESD-30 code R-XDFP-F36 X-XUUC-N R-XDFP-F36 R-XDFP-F36 R-XDFP-F36 - X-XUUC-N R-XDFP-F36
memory density 4194304 bi 4194304 bi 4194304 bi 4194304 bi 4194304 bi - 4194304 bi 4194304 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 - 8 8
Number of functions 1 1 1 1 1 - 1 1
Number of terminals 36 - 36 36 36 - - 36
word count 524288 words 524288 words 524288 words 524288 words 524288 words - 524288 words 524288 words
character code 512000 512000 512000 512000 512000 - 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C - 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8 - 512KX8 512KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
encapsulated code DFP DIE DFP DFP DFP - DIE DFP
Package shape RECTANGULAR UNSPECIFIED RECTANGULAR RECTANGULAR RECTANGULAR - UNSPECIFIED RECTANGULAR
Package form FLATPACK UNCASED CHIP FLATPACK FLATPACK FLATPACK - UNCASED CHIP FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum seat height 3.05 mm - 3.05 mm 3.05 mm 3.05 mm - - 3.05 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V - 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
surface mount YES YES YES YES YES - YES YES
technology CMOS CMOS CMOS CMOS CMOS - CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY - MILITARY MILITARY
Terminal form FLAT NO LEAD FLAT FLAT FLAT - NO LEAD FLAT
Terminal pitch 1.27 mm - 1.27 mm 1.27 mm 1.27 mm - - 1.27 mm
Terminal location DUAL UPPER DUAL DUAL DUAL - UPPER DUAL
width 12.195 mm - 12.195 mm 12.195 mm 12.195 mm - - 12.195 mm
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