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AS7C33512NTF18A-85TQI

Description
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
Categorystorage    storage   
File Size410KB,18 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
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AS7C33512NTF18A-85TQI Overview

3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD

AS7C33512NTF18A-85TQI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time8.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density9437184 bi
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
November 2004
®
AS7C33512NTF18A
3.3V 512K×18 Flowthrough Synchronous SRAM with NTD
TM
Features
• Organization: 524,288 words × 18 bits
• NTD
architecture for efficient bus operation
• Fast clock to data access: 7.5/8.5/10 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3 core power supply
• 2.5V or 3.3V I/O operation with separate V
DDQ
• 30 mW typical standby power
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic Block Diagram
A[18:0]
19
D
Address
register
burst logic
Q
19
CLK
CE0
CE1
CE2
R/W
BWa
BWb
ADV / LD
FT
LBO
ZZ
18
CLK
D
Q
19
Write delay
addr. registers
CLK
Control
logic
CLK
Write Buffer
512K x 18
SRAM
array
DQ [a,b]
D
Data
Q
input
register
CLK
18
18
18
18
CLK
CEN
OE
Output
buffer
18
OE
DQ [a,b]
Selection Guide
-75
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
8.5
7.5
280
120
30
-85
10
8.5
260
110
30
-10
12
10
220
100
30
Units
ns
ns
mA
mA
mA
11/8/04, v. 1.1
Alliance Semiconductor
P. 1 of 18
Copyright © Alliance Semiconductor. All rights reserved.

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Description 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD
Is it Rohs certified? incompatible - incompatible conform to incompatible incompatible conform to incompatible conform to conform to
Maker ALSC [Alliance Semiconductor Corporation] - ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation]
Parts packaging code QFP - QFP QFP QFP QFP QFP QFP QFP QFP
package instruction LQFP, - LQFP, LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, LQFP, LQFP,
Contacts 100 - 100 100 100 100 100 100 100 100
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code 3A991.B.2.A - 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 8.5 ns - 10 ns 7.5 ns 7.5 ns 7.5 ns 7.5 ns 8.5 ns 8.5 ns 8.5 ns
Other features FLOW-THROUGH ARCHITECTURE - FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE
JESD-30 code R-PQFP-G100 - R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 - e0 e3 e0 e0 e3 e0 e3 e3
length 20 mm - 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
memory density 9437184 bi - 9437184 bi 9437184 bi 9437184 bi 9437184 bi 9437184 bi 9437184 bi 9437184 bi 9437184 bi
Memory IC Type ZBT SRAM - ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 18 - 18 18 18 18 18 18 18 18
Number of functions 1 - 1 1 1 1 1 1 1 1
Number of terminals 100 - 100 100 100 100 100 100 100 100
word count 524288 words - 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 - 512000 512000 512000 512000 512000 512000 512000 512000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 70 °C 70 °C 85 °C 85 °C 70 °C 70 °C 85 °C
organize 512KX18 - 512KX18 512KX18 512KX18 512KX18 512KX18 512KX18 512KX18 512KX18
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP - LQFP LQFP LQFP LQFP LQFP LQFP LQFP LQFP
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE - FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED 245 NOT SPECIFIED NOT SPECIFIED 245 NOT SPECIFIED 245 245
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm - 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
Maximum supply voltage (Vsup) 3.465 V - 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V - 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES YES YES YES YES YES
technology CMOS - CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL
Terminal surface TIN LEAD - TIN LEAD MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN TIN LEAD MATTE TIN MATTE TIN
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm - 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD - QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED 30 30
width 14 mm - 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
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