MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
TM90DZ/CZ-24,-2H
•
I
T (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
90A
Repetitive peak reverse voltage
........
1200/1600V
V
DRM
Repetitive peak off-state voltage
........
1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
K2
G2
(DZ)
K
2
G
2
13
26
A
1
K
2
CR
1
K
1
CR
2
A
2
K
1
G
1
K1
G1
16.5
23
23
3–M5
(CZ)
Tab#110,
t=0.5
A
1
CR
1
K
1
K
2
K
2
G
2
A
2
CR
2
K
1
G
1
LABEL
6.5
21
30
9
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
140
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=82°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
90
1800
1.4
×
10
4
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=270A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
15
15
1.4
—
2.0
—
100
0.3
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.8
2000
T
j
=125°C
1600
1200
800
400
1.0
1.2
1.4
1.6
1.8
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
0.40
GATE CHARACTERISTICS
V
FGM
=10V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
4
3
2
GATE VOLTAGE (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
10
1
P
GM
=5.0W
7
5 V
GT
=2.0V
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
100mA
7
5
T
j
=25°C
3
2
V
GD
=0.25V
–1
10
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
I
FGM
=2.0A
160
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
130
120
CASE TEMPERATURE (°C)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
140
120
θ
360°
PER SINGLE
ELEMENT
180°
120°
90°
60°
PER SINGLE
ELEMENT
110
100
90
80
70
60
θ=30°
RESISTIVE,
100 INDUCTIVE
LOAD
80
θ=30°
60
40
20
0
0
20
40
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
60° 90° 120° 180°
60
80
100
50
0
20
40
60
80
100
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
160
AVERAGE ON-STATE POWER
DISSIPATION (W)
140
120
100
80
60
40
20
0
0
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
270° DC
CASE TEMPERATURE (°C)
PER SINGLE
ELEMENT
120°
90°
60°
θ=30°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80 100 120 140 160
180°
130
120
110
100
90
80
70
60
50
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
60°
90°
180°
120° 270° DC
20
40
60
0
20
40
60
80 100 120 140 160
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
320
280
AVERAGE ON-STATE
POWER DISSIPATION (W)
240
200
160
120
80
40
0
0
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
θ
CASE TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE MODULE
130
120
110
100
90
80
70
60
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
0°
18
θ
=
0°
12
°
90
°
60
°
30
θ=30°
60°,90°
180°,120°
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
0
40
80
120
160
200
PER SINGLE MODULE
40
80
120
160
200
50
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
320
280
240
120°
200
160
120
80
40
0
0
40
80
60°
θ=30°
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120
160
200
90°
180°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
60
50
0
40
80
120
160
200
θ=30°
60° 90° 120° 180°
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
320
280
240
200
160
120
80
40
0
0
40
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80 120 160 200 240 280 320
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
130
RESISTIVE,
INDUCTIVE
120
LOAD
90° 120°
60°
θ=30°
110
100
90
80
70
60
50
0
40
80 120 160 200 240 280 320
θ=30°
60°
90°
120°
θ
360°
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
51mcu
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