1N4002GC1 datasheet, PDF - EEWORLD Datasheet

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1N4002GC1: DescriptionRectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN; CategoryDiscrete semiconductor diode; File Size468KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N4002GC1 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N4002GC1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY; LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N4001G THRU 1N4007G

General Purpose Rectifier

Features

● High efficiency

● High current capability

● High reliability

● High surge current capability

● Low power loss

● Glass passivated chip junction

● Solder dip 275 °C max. 7 s, per JESD 22-B106

RoHS

COMPLIANT

Mechanical Data

●

Package:

DO-204AL(DO-41)

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant

●

Terminals:

Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Polarity:

Color band denotes cathode end

■Maximum Ratings

(Ta=25℃ Unless otherwise specified）

PARAMETER

Device marking code

Repetitive Peak Reverse Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta =85℃

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Ta=25℃

Storage Temperature

Junction Temperature

RRM

F(AV)

SYMBOL

UNIT

1N4001G

1N4002G

100

1N4003G

200

1N4004G

1N4005G

1N4006G

800

1N4007G

1000

1N4004G 1N4005G

400

1.0

600

FSM

Tstg

℃

-55 ~+150

-55~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum DC reverse current

at rated DC blocking voltage

per diode

SYMBOL

RRM1

μA

RRM2

Ta=100℃

Measured at 1MHZ

and Applied Reverse

Voltage of 4.0 V.D.C.

UNIT

TEST CONDITIONS

=1.0A

Ta=25℃

1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G

1.1

2.5

Typical junction capacitance

■

Thermal Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Thermal Resistance(Typical)

SYMBOL

θJ-A

UNIT

℃/W

1N4001G

1N4002G

1N4003G

1N4004G

1N4005G

1N4006G

1N4007G

1/4

S-A016

Rev.2.1,28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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