TO-220 8A Triac
TM841M-L, TM861M-L
s
Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=8A
q
Gate trigger Current: I
GT
=30mA max (MODE , ,
External Dimensions
(Unit: mm)
16.7max
0.2
±
0.2
3.0
±
8.8
10.4max
5.0max
2.1max
)
φ
3.75
±
0.1
a
b
±
0.15
1.35
12.0 min
4.0 max
+
0.2
0.65 –
0.1
±
0.1
2.5
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
±
0.1
2.5
±
0.2
1.7
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
Ratings
TM841M-L
400
8.0
80
10
2
5
0.5
– 40 to
+
125
– 40 to
+
125
TM861M-L
600
Unit
V
A
A
V
A
W
W
°C
°C
Conditions
Conduction angle 360°, Tc=108°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
(Tj=25°C, unless otherwise specified)
Symbol
I
DRM
V
TM
Ratings
min
typ
0.3
max
2.0
0.1
1.6
0.8
2.0
2.0
2.0
30
30
30
0.7
0.8
0.9
8
10
12
30
0.2
12
1.8
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
∞
, Tj=125
°C
V
D
=V
DRM
, R
GK
=
∞
, Tj=25
°C
Pulse test, I
TM
=10A
T
2
, G
V
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
+
+
–
–
–
–
+
+
+
–
Gate trigger voltage
V
GT
–
+
+
–
T
2
, G
mA
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
V
mA
°C
/W
Gate trigger current
I
GT
–
+
Gate non-trigger voltage
Holding current
Thermal resistance
V
GD
I
H
Rth
V
D
=1/2×V
DRM
, Tj=125
°C
V
D
=6V
Junction to case
36
TM841M-L, TM861M-L
v
T
–
i
T
Characteristics (max)
100
50
Tj=25°C
Tj=125°C
I
TSM
Ratings
100
Gate Characteristics
Tj= –20°C
Tj= –40°C
Surge on-state current I
TSM
(A)
i
T
(A)
80
v
GF
(V)
10 ms
1cycle
1
0
0
8
On-state current
10
5
60
20 40 60 80
Gate voltage
50Hz
Gate trigger current
I
GT
(mA)
6
4
40
1
0.5
0.3
1.0
20
2
0
1
5
10
50
100
0
See graph at the upper right
0
2.0
3.0
3.6
1
2
Tj=25°C
Initial junction temperature
Tj=125°C
I
TSM
Gate trigger voltage V
GT
(V)
12
10
3
2
P
G
M
W
=5
3
On-state voltage
v
T
( V )
Number of cycle
Gate current
i
GF
(A)
I
T(RMS)
– P
T(AV)
Characteristics
12
I
T(RMS)
– Tc Ratings
150
I
T(RMS)
– Ta Ratings
150
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
I
H
temperature Characteristics
(Typical)
20
(V
D
=30V)
Average on-state power P
T(AV)
(W)
Full-cycle sinewave
Conduction angle :360°
Ambient temperature T
a
(°C)
10
125
125
100
Case temperature T
C
(°C)
8
100
6
75
75
Holding current I
H
(mA)
10
(T
2
– T
1
)
–
+
+
–
4
2
0
50
50
25
0
( T
2
– T
1
)
25
Full-cycle sinewave
Conduction angle :360°
0
2
4
6
8
10
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0
–40
0
25
50
75
100
125
RMS on-state current I
T (RMS)
(A)
RMS on-state current I
T (RMS)
(A)
RMS on-state current I
T (RMS)
(A)
Junction temperature Tj (°C)
Pulse trigger temperature Characteristics
(MODE – )
30
v
gt
(Typical)
(MODE – )
30
30
(MODE – )
)
)
)
trigger
V
GT
DC gateat 25°C
voltage
trigger
V
GT
DC gateat 25°C
voltage
50%
50%
trigger
V
GT
DC gateat 25°C
voltage
v
gt
10
Tj= – 40°C
– 20°C
25°C
75°C
125°C
v
gt
10
v
gt
50%
t
w
t
w
Tj= – 40°C
– 20°C
25°C
75°C
125°C
10
Tj= – 40°C
– 20°C
25°C
75°C
125°C
t
w
(
(
trigger
v
gt
(
Gateand
t
w
voltage
)
at Tj
trigger
v
gt
(
Gateand
t
w
voltage
)
at Tj
1
trigger
v
gt
(
Gateand
t
w
voltage
)
at Tj
(
1
1
0.1
0.5 1
10
10
2
10
3
10
4
0.1
0.5 1
10
10
2
10
3
10
4
0.1
0.5 1
10
10
2
10
3
10
4
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse trigger temperature Characteristics
(MODE – )
30
trigger
I
GT
DC gateat 25°C
current
i
gt
(Typical)
(MODE – )
30
trigger
I
GT
DC gateat 25°C
current
(MODE – )
30
50%
10
Tj= – 40°C
– 20°C
25°C
75°C
125°C
t
w
10
Tj= – 40°C
– 20°C
25°C
75°C
125°C
t
w
50%
trigger
I
GT
DC gateat 25°C
current
i
gt
)
)
)
i
gt
i
gt
10
Tj= – 40°C
– 20°C
25°C
75°C
125°C
50%
t
w
(
(
trigger
i
gt
(
Gateand
t
w
current
)
at Tj
trigger
i
gt
(
Gateand
t
w
current
)
at Tj
1
1
trigger
i
gt
(
Gateand
t
w
current
)
at Tj
(
10
3
10
4
1
0.1
0.5 1
10
10
2
10
3
10
4
0.1
0.5 1
10
10
2
0.1
0.5 1
10
10
2
10
3
10
4
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Pulse width
t
w (µs)
V
GT
temperature characteristics
(Typical)
1.2
1.0
MODE
MODE
MODE
(V
D
=6V, R
L
=10Ω)
I
GT
temperature characteristics
(Typical)
24
(V
D
=6V, R
L
=10Ω)
Transient thermal resistance
Characteristics
100
r
th
(°C/W)
Gate trigger voltage V
GT
(V)
Gate trigger current I
GT
(mA)
(T
2
–
,G
–
)
(T
2
+
,G
+
)
(T
2
+
,G
–
)
20
MODE
MODE
MODE
10
(T
2
–
, G
–
)
(T
2
+
, G
–
)
(T
2
+
, G
+
)
Junction to
operating
environment
10
0.8
0.6
0.4
0.2
0
–40
Transient thermal resistance
1
Junction to
case
0
25
50
75
100
125
0
–40
0
25
50
75
100
125
0.1
0.1
1
10
10
2
10
3
10
4
10
5
Junction temperature Tj (°C)
Junction temperature Tj (°C)
t, Time (ms)
37
Embedded System
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