2N7000P datasheet, PDF - EEWORLD Datasheet

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2N7000P: DescriptionSmall Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size184KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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2N7000P Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

2N7000P Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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-. —. —-..-.. ...—

.,,

“,..

.

.-

N-CHANNEL

ISSUE

2-

MARCH

ENHANCEMENT

MODE VERTICAL DMOS FET

94

FEATURES

*

*R

60 Volt VcEo

0S(0.)

= 5 ‘2

2N7000P

I

D

G

s

v

ABSOLUTE MAXIMUM

PARAMETER

Drain-Source

Continuous

Pulsed

Voltage

Drain Current

RATINGS.

SYMBOL

‘DS

at Tamb=250C

ID

——+—

lDM

‘GS

—

lJ&h!sJ

VALUE

60

200

~

‘–

UNIT

v

—

mA

v

Drain Current–-

Voltage

at Tamb=250C

Temperature

——

Range

’500

i 40

Gate-Source

Power

Dissipation

P

tot

Ti:T~tg

-1

---–-

2A.

mW

-55to

+150

\

“c

~

Operating

and Storage

PARAMETER

Drain-Source

Voltage

Gate-Source

—-

Gate-Body

Breakdown

SYMBOL

BVDss

MIN.

60

MAX.

UNIT

v

CONDITIONS.

ID=l OIA, VGsOV

.—

VGs

Threshold

Leakage

Voltage

—

‘GS(th)

lGSS

_ 0.8

3

10

1

v

nA--

UA

mA

—

mA

lD=lmA,

-

vG@

‘“

VD=

15V,

vD~=ov

Zero Gate Voltege

—-

———.

Drain Current

lD~s

q+f 75

On-State

——-.—

— .——

~~

Drain Current(1)

—.—

.——

On-State

VD~48V,

VDs48V,

VDSIOV,

VG~O

VG~OV,

VGF4.5V

T=125°C(2)

ID(m)

Static Drain-Source

Voltage (1)

Static Drain-Source

Resistance (1)

‘DS(on)

RDs&

~

2.5

0.4

5

T

V -

v

‘;

“-

VGs.=10V,lD.500mA

On-State

;;~;;;$;%--–

1’

(2)

__, _

Output

1

(2)

c,,,

input Capacitance

——. .——.

———

Common Source

Capacitance

(2)

‘Reve;se

Transfer

AL-P–E.-.;

c

0ss

~

—. —-—

Capacitance

I

25

I

pF

-4

VD-725V,

VGs:OV,

f= 1MHz

pF

——

———

— --–—

TurmOn Time (2)(3)

10

ns

\ VDD=15V,

lD=500mA

‘(on)

~ Rg=25Q, RL=25Q

Turn-Off Time (2)(3)

10

ns

Voff)

I

) Measured

under pulsed conditions.

Width=300ps.

Duty cycle <2% (2) Sample test.

1)Switching

times measured with 50Q source impedance

and <5ns rise time on a pulse generator

3-13

5

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