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LL4448-13

Description
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

LL4448-13 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, MINIMELF-2

LL4448-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature40
LL4148 / LL4448
FAST SWITCHING SURFACE MOUNT DIODE
SPICE MODEL: LL4148
Features
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
General Purpose Rectification
Silicon Epitaxial Planar Construction
A
MiniMELF
Dim
A
B
C
Min
3.30
1.30
0.28
Max
3.70
1.60
0.50
C
B
Mechanical Data
·
·
·
·
·
Case: MiniMELF
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.05 grams (approx.)
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
300
150
1.0
2.0
500
1.68
300
-65 to +175
LL4148
100
75
53
500
LL4448
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
LL4148
LL4448
LL4448
V
FM
Min
¾
0.62
¾
¾
¾
¾
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
j
= 150°C
V
R
= 20V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100W
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
I
RM
C
j
t
rr
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12013 Rev. F-2
1 of 2
www.diodes.com
LL4148 / LL4448
ã
Diodes Incorporated
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