ZXMS6002G
60V N-Channel self protected enhancement mode
IntelliFET™ MOSFET with status indication
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
IN
= 5V)
Clamping energy
V
DS
= 60V
500m
1.4A
550mJ
Description
Self protected low side MOSFET. Monolithic
over temperature, over current, over voltage
(active clamp) and ESD protected logic level
functionality. Intended as a general purpose
switch, with status indication.
Features
•
•
•
•
•
•
•
•
•
Status pin (analog status indication)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
Load dump protection (actively protects
load)
Logic level input
High continuous current rating
Note:
The tab is connected to the drain pin and
must be electrically isolated from the source
pin. Connection of significant copper to the tab
is recommended for best thermal performance.
S
D
Status
IN
Top view
Ordering information
Device
ZXMS6002GTA
Part mark
ZXMS6002
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity
per reel
1000
Issue 3 - June 2007
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1
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ZXMS6002G
Functional block diagram
Status
D
Over voltage
protection
IN
Over current
protection
Logic
Over temperature
protection
dV/dt
limitation
Human body
ESD protection
S
Applications and information
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors
All types of resistive, inductive and capacitive loads in switching applications
C compatible power switch for 12V and 24V DC applications
Automotive rated
Replaces electromechanical relays and discrete circuits
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
DS
, in order not to compromise the load current during normal operation. The design
max. DC operating current is therefore determined by the thermal capability of the package/
board combination, rather than by the protection circuitry
Note: This does not compromise the product's ability to self-protect during short-circuit load
conditions.
Status pin voltage reflects the gate drive being applied internally to the power MOSFET.
With V
IN
= 5V:
Status voltage ~ 5V indicates normal operation.
Status voltage ~ (2-3)V indicates that the device is in current-limiting mode.
Status voltage < 1V indicates that the device is in thermal shutdown.
•
Issue 3 - June 2007
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2
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ZXMS6002G
Issue 3 - June 2007
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ZXMS6002G
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
IN
=5V
Drain-source voltage for short circuit protection
V
IN
=10V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation @ T
amb
=25°C
(a)
Continuous drain current @ V
IN
=10V; T
amb
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
amb
=25°C
(a)
Continuous source current (body diode)
(a)
Pulsed source current (body diode)
(b)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
I
D
I
D
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
1.6
1.4
3
4.7
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Symbol
R
JA
R
JA
Limit
50
28
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXMS6002G
Characteristics
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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