A Product Line of
Diodes Incorporated
Green
ZXTP2012Z
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -60V
I
C
= -4.3A high continuous current
R
SAT
= 32mΩ for a low equivalent On-Resistance
Low saturation voltage V
CE(sat)
< -65mV @ I
C
= -1A
h
FE
specified up to -10A for high current gain hold up
Complementary NPN type: ZXTN2010Z
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
•
•
•
•
•
•
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Application
•
•
•
•
•
Emergency lighting circuits
Motor driving (including DC fans)
Backlight inverters
Power switches
Gate driving MOSFETs and IGBTs
SOT89
C
E
B
C
C
B
Top View
E
Device Symbol
Top View
Pin Out
Ordering Information
(Note 4 & 5)
Product
ZXTP2012ZTA
ZXTP2012Z-13R
ZXTP2012ZQTA
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
951
951
951
Reel size (inches)
7
13
7
Tape width (mm)
12
12
12
Quantity per reel
1,000
4,000
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
951
951 = Product Type Marking Code
ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2012Z
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-4.3
-15
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear derating factor
Power Dissipation (Note 7)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2012Z
Thermal Characteristics and Derating Information
10
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
2.0
50X50m m PCB
1.5
1.0
25X25m m PCB
1 o z c o p p er
1 oz copper
1
DC
1s
100ms
10ms
1ms
100µs
100m
Single Pulse. T
0.5
0.0
=25°C
amb
25X25mm PCB 1oz copper
10m
100m
1
10
100
0
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
80
Derating Curve
Thermal Resistance (°C/W)
Max Power Dissipation (W)
2 5 X 2 5 m m P C B 1 oz copp er
)
100
Single Pulse. Tamb=25°C
25X25mm PCB 1oz copper
60
D=0.5
40
D=0.2
Single Pulse
D=0.05
10
20
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2012Z
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 9)
Collector-Emitter Breakdown Voltage (Notes 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Notes 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
≤
1kΩ
I
EBO
h
FE
Min
-100
-100
-60
-7
-
-
-
100
100
45
10
Typ
-120
-120
-80
-8.1
< -1
< -1
< -1
250
200
90
25
-14
-50
-75
-160
-950
-840
120
48
39
370
Max
-
-
-
-
-20
-500
-20
-500
-10
300
Unit
V
V
V
V
nA
nA
nA
nA
nA
Test Condition
I
C
= -100µA
I
C
= -1µA, R
B
≤
1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, V
CE
= -1V
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
V
CB
= -10V, f = 1MHz,
V
CC
= -10V, I
C
= -1A,
I
B1
= I
B2
= -100mA
Collector-Emitter Saturation Voltage (Notes 9)
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
Transitional Frequency (Notes 9)
Output capacitance
Switching Time
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
ON
t
OFF
-
-20
-65
-110
-215
-1050
-950
-
-
-
mV
mV
mV
MHz
pF
ns
-
-
-
-
-
9. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2%.
ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2012Z
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
100m
0.3
0.2
0.1
-55°C
100°C
25°C
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
1m
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
300
1.4
1.2
100°C
V
CE
=1V
V
CE(SAT)
v I
C
1.4
I
C
/I
B
=10
250
Typical Gain (h
FE
)
1.2
-55°C
Normalised Gain
- V
BE(SAT)
(V)
1.0
0.8
0.6
25°C
200
150
100
1.0
0.8
0.6
0.4
1m
25°C
0.4
0.2
0.0
1m
-55°C
50
10m
100m
1
10
0
100°C
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.4
1.2
V
CE
=1V
-55°C
- V
BE(ON)
(V)
1.0
25°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
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