CLA110MB1200NA
High Efficiency Thyristor
V
RRM
I
TAV
V
T
=
=
=
1200 V
50 A
1,04 V
AC Controlling
1~ full-controlled
Part number
CLA110MB1200NA
Backside: Isolated
2
1
3
4
Features / Advantages:
●
AC controller for line frequency
●
Planar passivated chip
●
Long-term stability
of blocking currents and voltages
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
SOT-227B (minibloc)
●
Isolation Voltage: 3000 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
© 2015 IXYS all rights reserved
CLA110MB1200NA
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1300
V
1200
50
5
1,12
1,32
1,04
1,28
50
110
0,78
4,9
0,10
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
86
10
1
0,5
T
VJ
= 150 °C; f = 50 Hz
repetitive, I
T
= 150 A
t
P
= 200 µs; di
G
/dt = 0,45 A/µs;
I
G
= 0,45 A; V =
⅔
V
DRM
non-repet., I
T
=
50 A
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
10 µs
T
VJ
= 150°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 150°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
0,5 A/µs
150
µs
20 V/µs t
p
= 200 µs
220
1,10
1,19
935
1,01
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
A
kA
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
=
I
T
=
50 A
50 A
I
T
= 100 A
I
T
= 100 A
I
TAV
I
RMS
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current per phase
threshold voltage
slope resistance
T
C
= 110 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0,55 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
6,05 kA²s
5,89 kA²s
4,37 kA²s
4,25 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1,5
1,6
40
80
0,2
5
150
100
2
V
V
mA
mA
V
mA
mA
mA
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0,45 A; di
G
/dt = 0,45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0,5 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 50 A; V =
⅔
V
DRM
T
VJ
=125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
© 2015 IXYS all rights reserved
CLA110MB1200NA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
SOT-227B (minibloc)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
150
150
125
150
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
30
1,1
1,1
10,5
8,6
3,2
6,8
3000
2500
1,5
1,5
Product Marking
Part No.
Logo
XXXXX
®
Zyyww
abcd
Part description
C
L
A
110
MB
1200
NA
=
=
=
=
=
=
=
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Current Rating [A]
1~ full-controlled
Reverse Voltage [V]
SOT-227B (minibloc)
Assembly Line
DateCode
Assembly Code
Ordering
Standard
Ordering Number
CLA110MB1200NA
Marking on Product
CLA110MB1200NA
Delivery Mode
Tube
Quantity
10
Code No.
513128
Similar Part
MMO90-12io6
Package
SOT-227B (minibloc)
Voltage class
1200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0,78
3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
© 2015 IXYS all rights reserved
CLA110MB1200NA
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
© 2015 IXYS all rights reserved
CLA110MB1200NA
Thyristor
150
1000
900
100
800
50 Hz, 80% V
RRM
10000
V
R
= 0 V
I
T
[A]
50
125°C
150°C
0
0,5
T
VJ
= 25°C
1,0
1,5
I
TSM
700
T
VJ
= 45°C
It
[A
2
s]
T
VJ
= 125°C
500
400
0,01
0,1
1
1000
1
2
T
VJ
= 45°C
T
VJ
= 125°C
[A]
600
2
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time (1-10 ms)
10
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1000
160
140
120
dc =
1
0.5
0.4
0.33
0.17
0.08
V
G
1
2
1
3
100
t
gd
6
4
5
typ.
Limit
I
T(AV)M
[A]
100
80
[V]
[µs]
10
T
VJ
= 125°C
60
40
20
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
0,1
1
10
100
1000
10000
1
10
0
100
1000
0
25
50
75
100 125 150
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate controlled delay time
T
C
[°C]
Fig. 6 Max. forward current
at case temperature
0,6
80
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
0,5
0,4
60
P
(AV)
40
Z
thJC
0,3
[K/W]
0,2
0,1
R
thi
[K/W]
0.062
0.038
0.111
0.134
0.205
1
10
100
1000
[W]
20
t
i
[s]
0.011
0.001
0.03
0.35
0.14
10000
0
0
20
40
60
0
50
100
150
0,0
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
© 2015 IXYS all rights reserved
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