IXTA10N60P datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IXTA10N60P

IXTA10N60P: DescriptionPower Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size153KB，4 Pages; ManufacturerIXYS; Environmental Compliance

Download Datasheet Parametric View All

IXTA10N60P Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	IXTA10N60P	-	-	View	Buy Now

IXTA10N60P Overview

Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

IXTA10N60P Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	D2PAK
package instruction	TO-263, 3 PIN
Contacts	4
Reach Compliance Code	not_compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.74 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

Polar

Power MOSFET

IXTA10N60P

IXTP10N60P

DSS

D25

DS(on)

= 600V

= 10A

≤

740mΩ

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-263 AA (IXTA)

Symbol

DSS

DGR

GSS

GSM

D25

dv/dt

stg

sold

Weight

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 1MΩ

Continuous

Transient

= 25°C

= 25°C, Pulse Width Limited by T

= 25°C

≤

, V

≤

DSS

, T

≤

150°C

= 25°C

Maximum Ratings

600

±30

±40

500

200

-55 ... +150

150

-55 ... +150

V/ns

°C

Nm/lb.in.

Features

G = Gate

S = Source

D (Tab)

TO-220AB (IXTP)

D (Tab)

= Drain

Tab = Drain

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 Seconds

Mounting Torque (TO-220)

TO-263

TO-220

300

260

1.13 / 10

2.5

3.0

International Standard Packages

Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Rectifier

Low Q

Low R

DS(on)

Low Drain-to-Tab Capacitance

Low Package Inductance

Advantages

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

High Speed Power Switching

Applications

Symbol

Test Conditions

= 25°C Unless Otherwise Specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0V, I

= 250μA

= V

, I

= 250μA

30V, V

= 0V

= V

DSS

, V

= 0V

= 125°C

= 10V, I

= 0.5 • I

D25

, Notes 1, 2

Characteristic Values

Min. Typ.

Max.

600

3.0

5.5

±100

μA

740 mΩ

DS99330F(04/10)

Recommended Resources

Transceiver circuit diagram of single-channel power line communication

Bidirectional thyristor stepless dimmer with light stabilizing function

Feilu NSL-5 single-tube vertical electric heater circuit diagram

Circuit diagram for attaching monitoring function to telephone set

Baseband width modulator circuit with stereo mono conversion

Optical coupling used in telephone security device circuit diagram

Great God, please help: Dear experts, I need a program urgently. The hardware is 51 single chip microcomputer + 1602 display screen. The basic direction is: the car is in a fixed distance (100m). Design a program to calculat...; zhuzhupig 51mcu

How many bytes of program can be written in AT89C52?: The AT89C52 chip has only 8K bytes of repeatedly erasable read-only program memory (PEROM), so should the program code I write not exceed 8K? If the code exceeds 8K, what should I do if there is no ex...; 防避风港 Embedded System

Study on the Effectiveness Evaluation of Passive Jamming for Spaceborne SAR: AbstractTarget detection is the basis of SAR image understanding. Passive jamming of SAR will weaken its target detection capability. This paper selects the target detection probability as the perform...; JasonYoo Test/Measurement

Five correction methods for film deformation in PCB copying process: In the PCB copying process, the failure of temperature and humidity control or the excessive temperature rise of the exposure machine sometimes causes the film to deform. If it is not improved, it wil...; ohahaha PCB Design

Comrades! Please help me solve my work problems.: I have a bachelor's degree in electronic information science and technology. I have just graduated and started working for half a year. I am currently working on electronics in a small company, but mo...; yangyi1818 Talking about work

Who can provide ideas for developing a player similar to gglive?: Now I need to make a program that can play videos on the wab website. I searched online and found that gglive has achieved a similar function. Can anyone introduce some ideas for playing wab streaming...; candela Embedded System

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components