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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> VHF125-12IO7
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VHF125-12IO7

Description
Silicon Controlled Rectifier, 89A I(T)RMS, 123000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-6
CategoryAnalog mixed-signal IC    Trigger device   
File Size178KB，4 Pages
ManufacturerIXYS
Environmental Compliance
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VHF125-12IO7 Overview

Silicon Controlled Rectifier, 89A I(T)RMS, 123000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-6

VHF125-12IO7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeMODULE
package instructionMODULE-6
Contacts6
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationBRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE
Maximum DC gate trigger current100 mA
Maximum DC gate trigger voltage1.5 V
Quick connection description2G
Description of screw terminals2AK-CA-CK
Maximum holding current200 mA
JESD-30 codeR-XUFM-X6
JESD-609 codee4
Maximum leakage current5 mA
On-state non-repetitive peak current1500 A
Number of components2
Number of terminals6
Maximum on-state current123000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current89 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal surfaceGold (Au) - with Nickel (Ni) barrier
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

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VHF 85
VHF 125
Half Controlled Single Phase
Rectifier Bridge, B2HKF
with Freewheeling Diode
I
dAV
= 82/123 A
V
RRM
= 1200-1600 V
E~
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
VHF 85-12io7
VHF 85-14io7
VHF 125-12io7
VHF 125-14io7
VHF 125-16io7
Type
E
C
A
2
1
C~
1
B
B-
2
A+
Symbol
I
dAV
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Conditions
T
C
= 85°C; module
per leg
T
VJ
= 45°C;
V
R
= 0 V;
T
VJ
= T
VJM
;
V
R
= 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
VHF 85
VHF 125
Features
1000
1070
-o
1350
1450
11200
10750
9100
8830
150
500
1000
10
< 10
< 5
< 1
0.5
1150
1230
1500
1600
u
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
A/µs
82
58
123
89
I
2
t
(di/dt)
cr
a
T
VJ
= T
VJM
;
repetitive; I
T
= 50 A;
f = 400 Hz; t
P
= 200 µs;
V
D
=
2
/
3
V
DRM
;
s
T
VJ
= T
VJM
;
V
R
= 0;
e
5000
4750
T
VJ
= 45°C;
V
R
= 0 V;
6600
6280
h
I
G
= 0.3 A;
non repetitive;
di
G
/dt = 0.3 A/µs; I
T
=
1
/
3
I
dAV
(dv/dt)
cr
V
RGM
P
GM
t
A
A
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
15
54
27
6.5
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• UL listing applied for
Applications
• DC motor control
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
M6x12
p
T
VJ
= T
VJM
;
I
T
= I
TAVM
;
t
p
= 30 µs
t
p
= 500 µs
t
p
= 10ms
94
80
72
26
26
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 Hz RMS; t = 1 min
I
ISOL
≤
1 mA;
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
typ.
-40...+125
125
-40...+125
2500
3000
5
±15%
5
±15%
300
A +
3
B -
4
5
6
7
2
1
12
2.8 x 0.8
Nm
Nm
g
25
66
M6
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
© 2008 IXYS All rights reserved
1-4
6 5 5
6.5
C ~
E ~
3
30
T
VJ
= T
VJM
; V
DR
=
2
/
3
V
DRM
;
R
GK
=
∞;
method 1 (linear voltage rise)
7

VHF125-12IO7 Related Products

VHF125-12IO7 VHF125-14IO7 VHF125-16IO7
Description Silicon Controlled Rectifier, 89A I(T)RMS, 123000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-6 Silicon Controlled Rectifier, 89A I(T)RMS, 123000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, MODULE-6 Silicon Controlled Rectifier, 89A I(T)RMS, 123000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-6
Is it Rohs certified? conform to conform to conform to
Maker IXYS IXYS IXYS
Parts packaging code MODULE MODULE MODULE
package instruction MODULE-6 MODULE-6 MODULE-6
Contacts 6 6 6
Reach Compliance Code compliant compliant compliant
Shell connection ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE
Maximum DC gate trigger current 100 mA 100 mA 100 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Quick connection description 2G 2G 2G
Description of screw terminals 2AK-CA-CK 2AK-CA-CK 2AK-CA-CK
Maximum holding current 200 mA 200 mA 200 mA
JESD-30 code R-XUFM-X6 R-XUFM-X6 R-XUFM-X6
JESD-609 code e4 e4 e4
Maximum leakage current 5 mA 5 mA 5 mA
On-state non-repetitive peak current 1500 A 1500 A 1500 A
Number of components 2 2 2
Number of terminals 6 6 6
Maximum on-state current 123000 A 123000 A 123000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 89 A 89 A 89 A
Off-state repetitive peak voltage 1200 V 1400 V 1600 V
Repeated peak reverse voltage 1200 V 1400 V 1600 V
surface mount NO NO NO
Terminal surface Gold (Au) - with Nickel (Ni) barrier Gold (Au) - with Nickel (Ni) barrier Gold (Au) - with Nickel (Ni) barrier
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR

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