RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NEC Electronics |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-based maximum capacity | 3.7 pF |
| Collector-emitter maximum voltage | 250 V |
| Configuration | SINGLE |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 300 MHz |
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