DATA SHEET
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
V
CE(sat)
=
−0.3
V MAX. @I
C
=
−6
A
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
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ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
Tc = 25°C
Ta = 25°C
PW
≤
300
µ
s,
duty cycle
≤
10%
Conditions
Ratings
−150
−100
−7.0
−10
−20
−6.0
40
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
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Electrode Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1646, 2SA1646-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
=
−100
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−2
V, I
C
=
−0.5
A
V
CE
=
−2
V, I
C
=
−2
A
V
CE
=
−2
V, I
C
=
−6
A
I
C
=
−6
A, I
B
=
−0.3
A
I
C
=
−8
A, I
B
=
−0.4
A
I
C
=
−6
A, I
B
=
−0.3
A
I
C
=
−8
A, I
B
=
−0.4
A
V
CE
=
−10
V, I
C
=
−0.5
A
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
I
C
=
−6
A, I
B1
=
−I
B2
=
−0.3
A,
R
L
= 8.3
Ω,
V
CC
=
−50
V
Refer to the test circuit.
0.4
150
250
0.3
1.5
100
100
60
−0.3
−0.5
−1.2
−1.5
400
MIN.
TYP.
MAX.
−10
−10
Unit
µ
A
µ
A
−
−
−
V
V
V
V
MHz
pF
µ
s
µ
s
µ
s
*
Pulse test PW
≤
350
µ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16120EJ1V0DS
2SA1646, 2SA1646-Z
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(
°
C)
I
C
Derating dT (%)
Case Temperature T
C
(
°
C)
Collector Current I
C
(A)
Single pulse
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Pulse test
DC Current Gain h
FE
Collector Saturation Voltage V
CE(sat)
(V)
Pulse test
Collector Current I
C
(A)
Collector Current I
C
(A)
Data Sheet D16120EJ1V0DS
3
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