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2SB1261-Z

Description
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size3MB,399 Pages
ManufacturerNEC Electronics
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2SB1261-Z Overview

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, 3 PIN

2SB1261-Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionMP-3, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Maximum off time (toff)2500 ns
Maximum opening time (tons)500 ns
SEMICONDUCTORS
SELECTION
GUIDE
Microcomputer 1
IC Memory 2
Semi-Custom IC 3
Particular Purpose 4
General Purpose Linear IC 5
Transistor/Diode/Thyristor 6
RF and Microwave Devices 7
Optical Device 8
Index 9
April 1999

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Index Files: 437  1394  1138  1047  2821  9  29  23  22  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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