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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB1578-GB3
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2SB1578-GB3

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size130KB，6 Pages
ManufacturerNEC Electronics
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2SB1578-GB3 Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1578-GB3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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DATA SHEET
SILICON TRANSISTOR
2SB1578
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SB1578 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• New package with dimensions in between those of small signal
and power signal package
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SD2425
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode connection
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
7.5 cm
2
×
0.7 mm ceramic board used
PW
≤
10 ms, duty cycle
≤
50 %
Conditions
Ratings
−60
−60
−6.0
−5.0
−7.0
−1.0
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16147EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

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