DATA SHEET
SILICON TRANSISTOR
2SC3810
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
FEATURES
•
The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
PACKAGE DIMENSIONS (in millimeters)
5.0 MIN.
1.25
±
0.1
3.5
+0.3
5.0 MIN.
-0.2
2
0.6
±
0.1
current range.
•
Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
3
4
5.0 MIN.
1
5
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance (junction to case)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
R
th (j-c)
T
j
T
stg
RATINGS
20
10
1.5
65/unit
240/unit
90/unit
200
-65 to +200
UNIT
V
V
V
mA
mW
°C/W
°C
°C
(#492C)
PIN CONNECTIONS
2
3
C
2
C
1
4
B
1
E
5
1
B
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
h
FE
Ratio
Difference of Base to Emitter Voltage
Gain Bandwidth Product
Feedback Capacitance
SYMBOL
BV
CBO
BV
EBO
BV
CEO
I
CBO
I
EBO
h
FE
I
C
= 10
µ
A
I
E
= 10
µ
A, I
C
= 0
I
C
= 1 mA, R
BE
=
∞
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8 V, I
C
= 20 mA
50
0.6
100
TEST CONDITIONS
MIN.
20
1.5
10
1.0
1.0
250
1.0
30
7
8
0.5
1.0
mV
GHz
pF
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
h
FE1
/h
FE2
Note 1
V
CE
= 8 V, I
C
= 20 mA
∆
V
BE
f
T
Note 2
C
re
Note 3
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Notes 1.
h
FE1
is the smaller h
FE
value of the 2 transistors.
2.
Measured using a single-type device (equivalent to the 2SC3604).
3.
Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
Document No. P11698EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
©
2.0 MAX.
0.1
+0.06
-0.03
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
0.6
±
0.1
1996
2SC3810
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use
alcohol
as a solvent.
Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
f = 1.0 MHz
2
200
V
CE
= 8 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
C
re
- Feedback Capacitance - pF
1
0.7
0.5
0.3
0.2
h
FE
- DC Current Gain
100
50
20
0.1
1
3
5
7 10
20
V
CB
- Collector to Base Voltage - V
2
30
10
0.5
1
5
10
I
C
- Collector Current - mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
30
V
CE
= 8 V
20
f
T
- Gain Bandwidth Product - GHz
10
7
5
3
2
1
2
3
5
7
10
20
30
I
C
- Collector Current - mA
2
2SC3810
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
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4
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