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2SJ330

Description
Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size3MB,399 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SJ330 Overview

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ330 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTORS
SELECTION
GUIDE
Microcomputer 1
IC Memory 2
Semi-Custom IC 3
Particular Purpose 4
General Purpose Linear IC 5
Transistor/Diode/Thyristor 6
RF and Microwave Devices 7
Optical Device 8
Index 9
April 1999
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