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MMSZ5235B

Description
6.8 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size188KB,4 Pages
ManufacturerPacelader Industrial
Download Datasheet Parametric View All

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MMSZ5235B Overview

6.8 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

MMSZ5235B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage6.8 V
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipZENER
structuresingle
Diode component materialssilicon
polarityunidirectional
Diode typeZener diode
Working test current20 mA
Maximum total reference voltage5 %
MMSZ5221B THRU MMSZ5262B
SURFACE MOUNT ZENER TYPE
SOD-123F
0.071(1.80)
0.055(1.40)
0.110(2.80)
0.098(2.50)
0.028(0.70)
0.019(0.50)
0.154(3.90)
0.141(3.60)
Dimensions in inches and (millimeters)
FEATURES
Up to 500mW power dissipation.
Silicon epitaxial planar chip structure.
Wide zener reverse voltage range 2.4V to 75V.
Very tiny package size for high density applications.
Ideally suited for automated assembly processes.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
Epoxy:UL94-VO rated flame retardant
Case : Molded plastic, SOD-123F
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.010 gram
MAXIMUM RATINGS
(at T
A
=25 C unless otherwise noted)
o
PARAMETER
Forward voltage
Power Dissipation
Forward surge current
Storage temperature
Operating temperature
I
F
= 100 mA DC
CONDITIONS
Symbol
V
F
P
D
0.008(0.20)MAX
0.053(1.35)
0.037(0.95)
MIN.
TYP.
MAX.
1.00
500
4000
UNIT
V
mW
mA
o
8.3ms single half sine-wave superimposed
on rate load (JEDEC methode)
I
FSM
T
STG
T
J
-65
-55
+175
+150
C
C
o
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