SSF2715
Features
■
■
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
V
DSS
= 500V
I
D
= 5A
R
DS(ON)
= 1.2Ω
■
■
■
■
Description
SSF2715 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
energy pulse in the avalanche, and increases packing density.
SSF2715 TOP View (TO220)
Application
■
■
■
High current, high speed switching
Lighting
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
I
D
@Tc=25
ْ
C
I
D
@Tc=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
①
①
③
②
①
Max.
5
3
20
80
0.67
±30
120
5
8.5
4.5
–55
to +150
Units
A
W
W/
ْ
C
V
mJ
A
mJ
V/ns
ْ
C
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.56
—
62.5
ْ
C/W
Units
1
SSF2715
Electrical Characteristics @T
J
=25
ْ
C(unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
tr
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage current
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
△
V
(BR)DSS
/
△
T
J
Breakdown Voltage Temp.Coefficient
Min.
500
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.6
1.15
—
4.3
—
—
—
—
11
3
5
13
22
28
20
515
55
6.5
Max. Units
—
—
1.2
4.0
—
1
10
100
-100
15
—
—
36
54
66
50
670
72
8.5
V
Test Conditions
V
GS
=0V,I
D
=
250μA
④
V/ْC Reference to 25ْC,I
D
=250μA
Ω
V
GS
=10V,I
D
=2.5A
V
S
μA
nA
V
DS
=V
GS
,I
D
=250μA
V
DS
=40V,I
D
=2.25A
V
DS
=500V,V
GS
=0V
V
DS
=400V,V
GS
=0V,T
J
=150ْC
V
GS
=30V
V
GS
=-30V
I
D
=5A
nC V
DS
=400V
V
GS
=10V
V
DD
=250V
I
D
=5A
nS
R
G
=25Ω
V
GS
=0V
pF V
DS
=25V
f
=1.0MH
Z
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
T
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
.
.
Min.
—
—
—
—
—
Typ.
—
—
—
300
1.8
Max.
5
A
20
1.4
—
V
nS
uC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=5A,V
GS
=0V
④
T
J
=25ْC,I
F
=5A
di/dt=100A/μs
④
Notes:
①
Repetitive rating; pulse width limited by
maxIimum. junction temperature
②
L = 15mH, IAS =4 A, VDD = 50V,
RG = 25Ω, Starting TJ = 25°C
③
I
SD
≤5A,di/dt≤200A/μs,
V
DD
≤V
(BR)DSS
,
TJ≤25
ْ
C
④
Pulse width≤300μS; duty cycle≤2%
2
SSF2715
Typical Performance Characteristics
Figure 1 On-Region Characteristics
Figure 2 Transfer Characteristics
Figure 3 On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4 Body diode forward Voltage
Variation vs. Source Current and
temperature
Figure 5 Capacitance Characteristics
Figure 6 Gate Charge Characteristics
3
SSF2715
Typical Performance Characteristics
Figure 7 Breakdown Voltage Variation
vs. Temperature
Figure 8 On-Resistance Variation vs.
Temperature
Figure 9 Maximum Safe Operation
Area
Figure 10 Maximum Drain Current vs.
Case Temperature
Figure 12 Transient Thermal Response Curve
4
SSF2715
Test Circuit and Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
5
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