EEWORLDEEWORLDEEWORLD

Part Number

Search

SSF8205A

Description
Battery protection
File Size516KB,7 Pages
ManufacturerSILIKRON
Websitehttp://www.silikron.com
Download Datasheet View All

SSF8205A Overview

Battery protection

SSF8205A
DESCRIPTION
The SSF8205A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G1
D1
D2
G2
S1
S2
GENERAL FEATURES
V
DS
= 20V,I
D
= 6A
R
DS(ON)
< 37.5mΩ @ V
GS
=2.5V
R
DS(ON)
< 27.5mΩ @ V
GS
=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Schematic diagram
4 3 2 1
5 6 7 8
D1
S1
S1
G1
D2
S2
S2
8205A
G2
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
8205A
Device
SSF8205A
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
83
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS(th)
R
DS(ON)
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=4.5A
V
GS
=2.5V, I
D
=3.5A
©Silikron Semiconductor CO.,LTD.
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=18V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
Min
20
Typ
Max
Unit
V
1
±100
0.5
0.65
21
30
1.2
27.5
37.5
μA
nA
V
mΩ
mΩ
v1.1
1
http://www.silikron.com
I seldom deal with interfaces. Now that the speed is so high, I have to deal with single-ended signals and differential signals. If you see them, please share them.
As for this thing, my personal understanding is that it is a bit beyond the line and is more inclined towards signal integrity, but I have to intervene at the moment, so I want to understand it and ab...
btty038 PCB Design
STM32L152 power consumption issue
I recently designed a low-power product using the low-power series STM32L152VB (100PIN), and now I have a sad power consumption problem: Cry: 1. The DATASHEET says that the maximum leakage current of ...
malin732 stm32/stm8
Banknote number recognition system based on ARM
...
至芯科技FPGA大牛 FPGA/CPLD
Can anyone help me download a few programs from pudn and send them to my email? Thank you
A memory driver source code http://www.pudn.com/downloads/sourcecode/windows/vxd/detail1558.html Virtual serial port compiled with VC http://www.pudn.com/downloads170/sourcecode/windows/vxd/detail7884...
colin_cx Embedded System
How to use the SDK compiled with Studio 5.0 Platform Builder?
The compiled SDK is less than 5M. After running and installing the msi file directly, it can't compile when building a simple project. Generally, a standard SDK is more than 100M. Why is the SDK I com...
bestskw Embedded System
【TI recommended course】#Battery test solution#
//training.eeworld.com.cn/TI/show/course/5673...
Keith2019 TI Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 546  1213  2708  46  2697  11  25  55  1  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号