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3KP8.0A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size151KB,4 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
Download Datasheet View All

3KP8.0A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

3KP5.0 thru 3KP220CA
Transient Voltage Suppressors
Peak Pulse Power 3000W Stand-off Voltage 5.0 to 220V
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
Glass passivated chip junction in P-600/R-6 package
3000W Peak Pulse Power capability at on 10/1000uS waveform
Excellent clamping capability
Low zener impedance
Repetition rate(Duty Cycle):.05%
Fast response time: typically less than 1.0 ps from 0 volts to BV
min
Typical I
R
less than 1uA above 10V
High temperature soldering guaranteed: 260
o
C/10 seconds/
.375",(9.5mm) lead length/5lbs., (2.3kg) tension
Mechanical Data
Case: JEDEC P600 molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method
2026
Polarity: Color band denoted cathode except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 grams
For Bidirectional use C or CA Suffix for types 3KP5.0 thru types 3KP220
Electrical characteristics apply in both directions.
Maximum Ratings and Thermal Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Parameter
Peak Power Dissipation at T
A
=25
o
C, T
P
=1ms
(1)
Symbol
P
PPM
I
PPM
P
M(AV)
(3)
Value
Minimum 3000
See Next Table
8.0
250
-55 to +175
Unit
W
A
W
Amps
o
Peak pulse current with a 10/1000
u
s waveform
(1)
Steady state power dissipation
at T
L
=75
o
C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
Operating junction and storage temperature range
I
FSM
T
J
, T
STG
C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25
o
C per Fig. 2
2. Mounted on copper pad area of 0.79 x 0.79" (20 x 20 mm) per Fig. 5.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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