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RS603

Description
6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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RS603 Overview

6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
RS601
THRU
RS607
6 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBU
A
D
Features
Low Leakage
Low Forward Voltage
Any Mounting Position
Silver Plated Copper Leads
Surge Overload Rating Of 200 Amps
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Catalog
Number
RS601
RS602
RS603
RS604
RS605
RS606
RS607
B
C
KBU6A
KBU6B
KBU6D
KBU6G
KBU6J
KBU6K
KBU6M
-
A
+
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
6.0A
200A
T
A
= 65°C
8.3ms, half sine
I
H
F
G
V
F
1.1V
I
FM
= 3.0A;
T
J
= 25°C
DIM
A
B
C
D
E
F
G
H
I
DIMENSIONS
INCHES
MIN
.895
---
.660
.15∅ x
1.00
.048
.260
.180
.185
MM
MIN
22.70
---
16.80
3.8∅ x
25.40
1.20
6.60
4.60
4.70
Maximum DC
Reverse Current At
I
R
10µA
T
A
= 25°C
Rated DC Blocking
1 mA
T
A
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
.935
.760
.700
.23L
---
.052
.280
.220
.205
MAX
23.70
19.30
17.80
5.57L
---
1.30
7.10
5.60
5.20
NOTE
HOLE
TYP
www.cnelectr.com

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Description 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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