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BSS7728

Description
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size102KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSS7728 Overview

200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

BSS7728 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Rev. 2.0
BSS7728N
SIPMOS
®
Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
60
5
0.2
SOT-23
Drain
pin 3
Gate
pin1
Source
pin 2
V
A
Type
Package
Ordering Code
Q67042-S4189
Tape and Reel Information
E6327: 3000 pcs/reel
Marking
sSK
BSS7728N SOT-23
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
0.2
0.16
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
0.8
6
±20
0.36
-55... +150
55/150/56
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=0.2A,
V
DS
=48V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-06-06

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