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1N4109

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size320KB,2 Pages
ManufacturerCobham Semiconductor Solutions
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1N4109 Overview

Zener Diode

1N4109 Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE, METALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage15 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current0.25 mA
Silicon Zener Diode Series
1N4099 thru 1N4135, 1N4099-1 thru 1N4135-1
Features
1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV
and JANS per MIL-PRF-19500/435
Low Current Operation at 250
μA
Low Reverse Leakage and Low Noise Characteristics
Metallurgically Bonded
Also available in DO-213 MELF style package
Maximum Ratings
Junction Temperature:
Storage Temperature:
DC Power Dissipation:
Power Derating:
-65°C to +175°C
-65°C to +175°C
500 mW @ +50°C
4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
JEDEC
TYPE
NUMBER
(NOTE 1)
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1N4120
1N4121
1N4122
1N4123
1N4124
1N4125
1N4126
1N4127
1N4128
1N4129
1N4130
1N4131
1N4132
1N4133
1N4134
1N4135
VOLTS
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
200
200
250
250
300
300
400
500
700
700
800
1000
1200
1500
μA
10
10
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
VOLTS
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.46
21.28
22.80
25.08
27.38
29.65
32.65
35.75
38.76
42.60
45.60
47.10
51.68
57.00
62.32
66.12
69.16
76.00
μ V/√Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
mA
56
51
46
44
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
14
13
12
11
9.8
8.9
8.1
7.5
6.7
6.4
6.1
5.6
5.1
4.6
4.4
4.2
3.8
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT@ IZT
MAXIMUM
REVERSE CURRENT
IR @ VR
MAXIMUM
NOISE
DENSITY
ND @ IZT
MAXIMUM
ZENER
CURRENT
IZM
NOTE 1: The JEDEC type numbers shown above have a Zener voltage tolerance of + 5% of the nominal Zener voltage.
Vz is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.
A “C” suffix denotes a + 2% tolerance and a “D” suffix denotes a + 1% tolerance.
Revision Date: 7/26/2012
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