BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
●
1.
2.
3.
4.
5.
6.
7.
8.
9.
Features :
4.118 inch (104.6mm) matrix height.
Square size 12.0 × 12.0mm.
Low power requirement.
Excellent characters appearance.
Multiplex drive , column anode com.
and row cathode com.
Multi color available.
Categorized for luminous intensity.
Stackable vertically and horizontally.
Solid state reliability.
●
Package Dimensions :
74.80(2.945)
104.60(4.118)
76.20(3.000)
PIN 1.
12.0x12.0
(.472x.472)
●
1.
Description :
The BM-41EG57MD is a
104.6mm (4.118")matrix height
5×7 square matrix display.
This product use hi-eff red chips and
green chips, the hi-eff red chips are
made from GaAsP on GaP substrate,
the green chips are made from GaP
on GaP subtrate.
This product have a black face and
white squares.
This product doesn't contain restriction
substance, comply ROHS standard.
12.80(.504)
0.80(.031)
5.08x8=40.64(1.600)
3.00(.118) MIN.
2.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3.
4.
●
Internal Circuit Diagram :
½鴻工業股½有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
●
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation Per Dot
Forward Current Per Dot
Peak Forward Current Per Dot
Reverse Voltage Per Dot
Operating Temperature
Storage Temperature
Soldering Temperature
(1/16" From Body)
Symbol
Pd
I
F
I
FP
(Duty 1/10, 1KHZ)
V
R
Topr
Tstg
Tsol
Hi-Eff Red
Rating
160
30
150
5
Green
Rating
160
30
150
Unit
mW
mA
mA
V
-
-
-
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
●
Electrical And Optical Characteristics(Ta=25℃)
Hi-Eff Red
Parameter
Forward Voltage Per Dot
Luminous Intensity Per Dot
Reverse Current Per Dot
Peak Wave Length
Dominant Wave Length
Spectral Line Half-width
Symbol Condition
V
F
Iv
I
R
λp
λd
∆λ
I
F
=10mA
I
F
=10mA
V
R
=5V
I
F
=10mA
I
F
=10mA
I
F
=10mA
Min.
-
-
-
-
626
-
Typ.
3.8
15.0
-
640
-
40
Max.
5.0
-
100
-
636
-
Unit
V
mcd
µA
nm
nm
nm
Green
Parameter
Forward Voltage Per Dot
Symbol Condition
V
F
Iv
I
R
I
F
=10mA
Min.
-
-
Typ.
4.2
Max.
5.0
-
Unit
V
mcd
µA
nm
nm
nm
Luminous Intensity Per Dot
Reverse Current Per Dot
Peak Wave Length
½鴻工業股½有限公司
http://www.brtled.com
I
F
=10mA
V
R
=5V
15.0
-
-
λp
I
F
=10mA
-
568
-
30
-
λd
∆λ
I
F
=10mA
I
F
=10mA
569
-
-
100
Dominant Wave Length
Spectral Line Half-width
574
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
●
Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
1.0
Fig.1 Relative Radiant Intensity VS. Wavelength
(G)
(E)
Relative Radiant Intensity
0.5
0
530
560
590
Wavelength(nm)
620
650
680
710
(E)
(G)
Relative Luminous Intensity
(@20mA)
3
4
5
50
Fig.2 Forward Current VS.
Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
Fig.3 Relative Luminous
Intensity VS.
Ambient Temperature
Forward Current (mA)
40
30
20
10
0
1
2
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Forward Current
0
-40
Ambient Temperature Ta( C)
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
-20
0
20
40
60
Relative Luminous Intensity
(@20mA)
3.0
2.0
(G)
(E)
Forward Current(mA)
1.0
½鴻工業股½有限公司
http://www.brtled.com
40
30
20
10
0
0
10
20
30
40
50
50
0.0
Forward Current(mA)
Ambient Temperature Ta( C)
20
40
60
80
100 120
Ver.1.0 Page 3 of 3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
