DU2880T
RF Power MOSFET Transistor
80W, 2-175MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
•
•
•
•
•
N- channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
16
206
200
-65 to +150
0.85
Units
V
V
A
W
°C
°C
°C/W
LETTER
MILLIMETERS
MIN
24.38
18.29
21.36
12.60
5.33
5.08
3.81
3.10
2.51
4.06
6.68
.10
MAX
25.15
18.54
21.74
12.85
5.59
5.33
4.06
3.15
2.67
4.57
7.49
.15
INCHES
MIN
.960
.720
.841
.496
.210
.200
.150
.122
.099
.160
.263
.004
MAX
990
.730
.856
.506
.220
.210
.160
.128
.105
.180
.295
.005
DIM
A
B
C
D
E
F
G
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
50
100
175
Z
IN
(Ω)
5.4 - j4.4
2.5 - j4.4
1.6 - j3.4
0.7 - j1.2
Z
LOAD
(Ω)
5.7 +j4.7
3.4 + j3.5
2.4 + j2.4
1.7 + j0.8
V
DD
= 28V, I
DQ
= 400mA, P
OUT
= 80 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
2.0
-
-
-
13
60
-
Max
-
4.0
4.0
6.0
-
180
160
32
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
H
J
K
L
M
Test Conditions
V
GS
= 0.0 V , I
DS
= 20.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 400.0 mA
V
DS
= 10.0 V , I
DS
= 4.0 A ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 60.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 60.0 W F =175 MHz
V
DD
= 28.0 V, I
DQ
= 400 mA, P
OUT
= 60.0 W F =175 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU2880T
RF Power MOSFET Transistor
80W, 2-175MHz, 28V
Typical Broadband Performance Curves
GAIN
VS
FREQUENCY
V
DD
=28 V I
DQ
=400 mA P
OUT
=80 W
EFFICIENCY
VS
FREQUENCY
V
DD
=28 V I
DQ
=400 mA P
OUT
=80 W
M/A-COM Products
Released;
RoHS Compliant
80
25
GAIN (dB)
70
EFFICIENCY (%)
20
60
15
50
25
50
100
150
175
FREQUENCY (MHz)
10
25
50
100
150
175
FREQUENCY (MHz)
120
POWER OUTPUT (W)
100
80
60
40
20
0
0.1
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=400 mA
30MHz
100MHz
175MHz
120
POWER OUTPUT (W)
100
80
60
40
20
0
5
13
POWER OUTPUT
VS
SUPPLY VOLTAGE
I
DQ
=400 mA F=175MHz P
IN
=3.0 W
0.2
0.3
1
2
3
4
15
20
25
30
33
POWER INPUT (W)
SUPPLY VOLTAGE (W)
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU2880T
RF Power MOSFET Transistor
80W, 2-175MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products
Released;
RoHS Compliant
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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